Datasheet ADMV7710 (Analog Devices)

制造商Analog Devices
描述71 GHz to 76 GHz, 1 Watt E-Band Power Amplifier With Power Detector
页数 / 页18 / 1 — 71 GHz to 76 GHz, 1 W E-Band. Power Amplifier with Power Detector. Data …
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71 GHz to 76 GHz, 1 W E-Band. Power Amplifier with Power Detector. Data Sheet. ADMV7710. FEATURES. GENERAL DESCRIPTION

Datasheet ADMV7710 Analog Devices, 修订版: A

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71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector Data Sheet ADMV7710 FEATURES GENERAL DESCRIPTION Gain: 24 dB typical
The ADMV7710 is an integrated, E-band, gallium arsenide
Output power for 1 dB compression: 28 dBm typical
(GaAs), pseudomorphic, high electron mobility tranfer (pHEMT),
Saturated output power: 29 dBm typical
mono-lithic microwave integrated circuit (MMIC), medium
Output third-order intercept: 34 dBm typical
power amplifier with an on-chip, temperature compensated
Input return loss: 18 dB typical
power detector that operates from 71 GHz to 76 GHz. The
Output return loss: 10 dB typical
ADMV7710 provides 24 dB of gain, 28 dBm of output power at
DC supply: 4 V at 800 mA
1 dB compression, and 29 dBm of saturated output power at 20%
No external matching required
power added efficiency from a 4 V power supply. The ADMV7710
Die size: 2.999 mm × 3.999 mm × 0.05 mm
exhibits excel ent linearity and is optimized for E-band commun-
APPLICATIONS
ications and high capacity, wireless backhaul radio systems. The amplifier configuration and high gain make the device an excel ent
E-band communication systems
candidate for last stage signal amplification before the antenna.
High capacity wireless backhaul radio systems
Al data is taken with the chip in a 50 Ω test fixture connected via
Test and measurement
a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port. The ADMV7710 is available in a 40-pad bare die (CHIP) and operates over the −55°C to +85°C temperature range.
FUNCTIONAL BLOCK DIAGRAM 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 A A A GG1 DD1A GG2 DD2A A V V V V GG4 DD4A V V DD3A GG3 V V ADMV7710 20 RFOUT 21 3 22 RFIN 2 1 B GG3 B B B V DD4B GG1 DD1B GG2 DD2B DD3B GG4 ET EF V V V V V V V VD VR
001
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
16408- Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE