Datasheet ADMV7810 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | 81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector |
| 页数 / 页 | 18 / 1 — 81 GHz to 86 GHz, 1 W E-Band Power. Amplifier with Power Detector. Data … |
| 修订版 | A |
| 文件格式/大小 | PDF / 435 Kb |
| 文件语言 | 英语 |
81 GHz to 86 GHz, 1 W E-Band Power. Amplifier with Power Detector. Data Sheet. ADMV7810. FEATURES. GENERAL DESCRIPTION
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81 GHz to 86 GHz, 1 W E-Band Power Amplifier with Power Detector Data Sheet ADMV7810 FEATURES GENERAL DESCRIPTION Gain: 20 dB typical
The ADMV7810 is an integrated E-band gallium arsenide (GaAs),
Output power for 1 dB compression: 28 dBm typical
pseudomorphic, high electron mobility transfer (pHEMT), mono-
Saturated output power: 29 dBm typical
lithic microwave integrated circuit (MMIC), medium power
Output third-order intercept: 33 dBm typical
amplifier with a temperature compensated on-chip power detector
Input return loss: 12 dB typical
that operates from 81 GHz to 86 GHz. The ADMV7810 provides
Output return loss: 20 dB typical
20 dB of gain, 28 dBm of output power at 1 dB compression, and
DC supply: 4 V at 800 mA
29 dBm of saturated output power at 18% power added efficiency
No external matching required
from a 4 V power supply. The ADMV7810 exhibits excellent
Die size: 2.999 mm × 3.799 mm × 0.05 mm
linearity and is optimized for E-band communications and
APPLICATIONS
high capacity wireless backhaul radio systems. The amplifier configuration and high gain make the device an excellent
E-band communication systems
candidate for last stage signal amplification before the antenna.
High capacity wireless backhaul radio systems
All data is taken with the chip in a 50 Ω test fixture connected via
Test and measurement
a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port. The ADMV7810 is available in a 40-pad bare die (CHIP) and operates over the −55°C to +85°C temperature range.
FUNCTIONAL BLOCK DIAGRAM 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 A 2A A G 4A GG1 DD1A DD2A A G V V VG V DD4 VG V GG3 DD3A V V ADMV7810 20 RFOUT 21 22 3 RFIN 2 1 3B G B B VG B B 4B G GG1 DD1 GG2 DD3B DD4B ET EF V V V DD2 V V VG V VD VR
1 -00
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
409 16 Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018–2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
The ADMV7810 is an integrated E-band gallium arsenide (GaAs),
Output power for 1 dB compression: 28 dBm typical
pseudomorphic, high electron mobility transfer (pHEMT), mono-
Saturated output power: 29 dBm typical
lithic microwave integrated circuit (MMIC), medium power
Output third-order intercept: 33 dBm typical
amplifier with a temperature compensated on-chip power detector
Input return loss: 12 dB typical
that operates from 81 GHz to 86 GHz. The ADMV7810 provides
Output return loss: 20 dB typical
20 dB of gain, 28 dBm of output power at 1 dB compression, and
DC supply: 4 V at 800 mA
29 dBm of saturated output power at 18% power added efficiency
No external matching required
from a 4 V power supply. The ADMV7810 exhibits excellent
Die size: 2.999 mm × 3.799 mm × 0.05 mm
linearity and is optimized for E-band communications and
APPLICATIONS
high capacity wireless backhaul radio systems. The amplifier configuration and high gain make the device an excellent
E-band communication systems
candidate for last stage signal amplification before the antenna.
High capacity wireless backhaul radio systems
All data is taken with the chip in a 50 Ω test fixture connected via
Test and measurement
a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port. The ADMV7810 is available in a 40-pad bare die (CHIP) and operates over the −55°C to +85°C temperature range.
FUNCTIONAL BLOCK DIAGRAM 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 A 2A A G 4A GG1 DD1A DD2A A G V V VG V DD4 VG V GG3 DD3A V V ADMV7810 20 RFOUT 21 22 3 RFIN 2 1 3B G B B VG B B 4B G GG1 DD1 GG2 DD3B DD4B ET EF V V V DD2 V V VG V VD VR
1 -00
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
409 16 Figure 1.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018–2019 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE