Datasheet HMC907A (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz |
| 页数 / 页 | 12 / 4 — HMC907A. GaAs pHEMT MMIC. POWER AMPLIFIER, 0.2 - 22 GHz. P1dB vs. Supply … |
| 文件格式/大小 | PDF / 915 Kb |
| 文件语言 | 英语 |
HMC907A. GaAs pHEMT MMIC. POWER AMPLIFIER, 0.2 - 22 GHz. P1dB vs. Supply Voltage. Low Frequency Psat vs. Temperature
该数据表的模型线
文件文字版本
HMC907A
v03.0218
GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz P1dB vs. Supply Voltage Low Frequency Psat vs. Temperature
32 32 30 30 IP 28 ) 28 ) H m m (dB 26 (dB 26 +25C at 1dB s +85C P P +8V -55C 24 +9V 24 +10V R - C +11V E 22 22 W 20 20 0 4 8 12 16 20 24 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 O FREQUENCY (GHz) FREQUENCY (GHz) R & P
Psat vs. Temperature Psat vs. Supply Voltage
IA 32 32 IN 30 30 28 ) 28 ) m m S - L (dB 26 +25C (dB 26 +8V R at at s +85C +9V s P +10V -55C P +11V IE 24 24 22 22 LIF P 20 20 0 4 8 12 16 20 24 0 4 8 12 16 20 24 M FREQUENCY (GHz) FREQUENCY (GHz) A
Power Compression @ 2 GHz Power Compression @ 6 GHz
35 420 35 420 Pout ) 30 410 ) 30 Pout 410 % Gain % Gain PAE PAE 25 400 25 400 , PAE( , PAE( B) I B) I (d 20 390 dd (d 20 390 dd N ( N ( AI m AI m 15 380 A 380 A ) 15 ) ), G ), G Bm 10 370 Bm 10 370 t(d t(d u u Po 5 Idd 360 Po 5 Idd 360 0 350 0 350 0 3 6 9 12 15 18 21 0 3 6 9 12 15 18 21 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Reverse Isolation vs. Temperature Noise Figure vs. Frequency Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz Power Compression @ 2 GHz Power Dissipation Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
v03.0218
GaAs pHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz P1dB vs. Supply Voltage Low Frequency Psat vs. Temperature
32 32 30 30 IP 28 ) 28 ) H m m (dB 26 (dB 26 +25C at 1dB s +85C P P +8V -55C 24 +9V 24 +10V R - C +11V E 22 22 W 20 20 0 4 8 12 16 20 24 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 O FREQUENCY (GHz) FREQUENCY (GHz) R & P
Psat vs. Temperature Psat vs. Supply Voltage
IA 32 32 IN 30 30 28 ) 28 ) m m S - L (dB 26 +25C (dB 26 +8V R at at s +85C +9V s P +10V -55C P +11V IE 24 24 22 22 LIF P 20 20 0 4 8 12 16 20 24 0 4 8 12 16 20 24 M FREQUENCY (GHz) FREQUENCY (GHz) A
Power Compression @ 2 GHz Power Compression @ 6 GHz
35 420 35 420 Pout ) 30 410 ) 30 Pout 410 % Gain % Gain PAE PAE 25 400 25 400 , PAE( , PAE( B) I B) I (d 20 390 dd (d 20 390 dd N ( N ( AI m AI m 15 380 A 380 A ) 15 ) ), G ), G Bm 10 370 Bm 10 370 t(d t(d u u Po 5 Idd 360 Po 5 Idd 360 0 350 0 350 0 3 6 9 12 15 18 21 0 3 6 9 12 15 18 21 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Typical Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Reverse Isolation vs. Temperature Noise Figure vs. Frequency Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz Power Compression @ 2 GHz Power Dissipation Absolute Maximum Ratings Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit Mounting & Bonding Techniques for Millimeterwave GaAs MMICs