Datasheet HMC998APM5E (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz |
| 页数 / 页 | 14 / 1 — HMC998APM5E. GaAs pHEMT MMIC. 2 WATT POWER AMPLIFIER, DC - 22 GHz. … |
| 文件格式/大小 | PDF / 1.5 Mb |
| 文件语言 | 英语 |
HMC998APM5E. GaAs pHEMT MMIC. 2 WATT POWER AMPLIFIER, DC - 22 GHz. Typical Applications. Features. Functional Diagram
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HMC998APM5E
v04.0121
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Typical Applications Features
The HmC998Apm5e is ideal for: p1dB output power: +32 dBm T • Test instrumentation psat output power: +34 dBm m s • military & space High Gain: 15 dB • fiber optics output ip3: 42 dBm r - supply Voltage: Vdd = +15V @ 500 mA e 50 ohm matched input/output w 32 lead 5x5 mm lfCsp package: 25 mm² o p
Functional Diagram General Description
The HmC998Apm5e is a GaAs pHemT mmiC r & Distributed power Amplifier which operates from DC A e to 22 GHz. The amplifier provides +15 dB of gain, +42 dBm output ip3, and +32 dBm of output power at 1dB gain compression while requiring only 500mA lin from a +15V supply. The HmC998Apm5e exhibits a slightly positive gain slope from 3 to 17 GHz making s - it ideal for military and space and test equipment r applications. The HmC998Apm5e amplifier i/os ie are internal y matched to 50 ohms and is housed in a roHs compliant, 5x5 mm leadless Qfn surface lif mount package. p m A
Electrical Specifications, T = +25° C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 mA [2] A
parameter min. Typ. max. min. Typ. max. min. Typ.. max. Units frequency range DC - 2 2 - 18 18 - 22 GHz Gain 13 15 13 15 13 15 dB Gain flatness ±0.50 ±0.45 ±0.30 dB Gain Variation over Temperature 0.005 0.005 0.004 dB/ °C input return loss 15 22 22 dB output return loss 14 17 16 dB output power for 1 dB Compression (p1dB) 27 30 29 32 28 31 dBm saturated output power (psat) 34 34 32 dBm output Third order intercept (ip3) 42 42 40 dBm pout/tone = +18dBm noise figure 8 3 4 dB supply Current (idd) 500 500 500 mA supply Voltage (Vdd) 11 15 15 11 15 15 11 15 15 V
[1]
refer to application circuit section noTe 5 for the Vgg2 bias for different Vdd levels.
[2]
Adjust Vgg1 to achieve idq = 500 mA typical; Vgg1 = -0.58V typical. product covered by one or more Us and foreign patents: Us pat. nos. 8,786,368; 9,425,752; patents pending. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
v04.0121
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, DC - 22 GHz Typical Applications Features
The HmC998Apm5e is ideal for: p1dB output power: +32 dBm T • Test instrumentation psat output power: +34 dBm m s • military & space High Gain: 15 dB • fiber optics output ip3: 42 dBm r - supply Voltage: Vdd = +15V @ 500 mA e 50 ohm matched input/output w 32 lead 5x5 mm lfCsp package: 25 mm² o p
Functional Diagram General Description
The HmC998Apm5e is a GaAs pHemT mmiC r & Distributed power Amplifier which operates from DC A e to 22 GHz. The amplifier provides +15 dB of gain, +42 dBm output ip3, and +32 dBm of output power at 1dB gain compression while requiring only 500mA lin from a +15V supply. The HmC998Apm5e exhibits a slightly positive gain slope from 3 to 17 GHz making s - it ideal for military and space and test equipment r applications. The HmC998Apm5e amplifier i/os ie are internal y matched to 50 ohms and is housed in a roHs compliant, 5x5 mm leadless Qfn surface lif mount package. p m A
Electrical Specifications, T = +25° C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 mA [2] A
parameter min. Typ. max. min. Typ. max. min. Typ.. max. Units frequency range DC - 2 2 - 18 18 - 22 GHz Gain 13 15 13 15 13 15 dB Gain flatness ±0.50 ±0.45 ±0.30 dB Gain Variation over Temperature 0.005 0.005 0.004 dB/ °C input return loss 15 22 22 dB output return loss 14 17 16 dB output power for 1 dB Compression (p1dB) 27 30 29 32 28 31 dBm saturated output power (psat) 34 34 32 dBm output Third order intercept (ip3) 42 42 40 dBm pout/tone = +18dBm noise figure 8 3 4 dB supply Current (idd) 500 500 500 mA supply Voltage (Vdd) 11 15 15 11 15 15 11 15 15 V
[1]
refer to application circuit section noTe 5 for the Vgg2 bias for different Vdd levels.
[2]
Adjust Vgg1 to achieve idq = 500 mA typical; Vgg1 = -0.58V typical. product covered by one or more Us and foreign patents: Us pat. nos. 8,786,368; 9,425,752; patents pending. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D