Datasheet HMC566LP4E (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz |
| 页数 / 页 | 6 / 3 — HMC566LP4E. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 28 - 36 GHz. P1dB vs. … |
| 文件格式/大小 | PDF / 417 Kb |
| 文件语言 | 英语 |
HMC566LP4E. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 28 - 36 GHz. P1dB vs. Temperature. Psat vs. Temperature
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HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz
7
P1dB vs. Temperature Psat vs. Temperature
T 18 18 m 16 16 s 14 14 12 12 e - (dBm) (dBm) 10 10 is P1dB Psat o 8 8 +25 C +25 C +85 C +85 C 6 - 40 C 6 - 40 C 4 4 w N 26 28 30 32 34 36 38 26 28 30 32 34 36 38 FREQUENCY (GHz) FREQUENCY (GHz) lo s -
Output IP3 vs. Temperature Power Compression @ 32 GHz
r 30 25 ie ) 28 (% 20 E lif 26 A p ), P Pout 24 15 Gain (dB m PAE (dB) IN 22 A A IP3 ), G 10 20 +25 C m +85 C 18 - 40 C 5 out (dB P 16 14 0 26 28 30 32 34 36 38 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 FREQUENCY (GHz) INPUT POWER (dBm)
Gain, Noise Figure & Power vs. Supply Voltage @ 32 GHz Absolute Maximum Ratings
30 10 Drain Bias Voltage (Vdd1, 2, 3, 4) +3.5 V 27 9 rf input power (rfiN)(Vdd = +3 Vdc) +5 dBm 24 8 N Channel Temperature 175 °C 21 7 O (dBm) Gain IS P1dB E Continuous pdiss (T= 85 °C) 18 6 F 0.8 w I (derate 9.6 mw/°C above 85 °C) P1dB 15 5 GUR Thermal resistance 12 4 (dB), E 104 °C/w (d (channel to ground paddle) 9 3 B Noise Figure ) GAIN storage Temperature -65 to +150 °C 6 2 3 1 operating Temperature -40 to +85 °C 0 0 2.5 3 3.5 Vdd (V) eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Info F rmoatri op n rfiurcne is ,h ed d ebly ivAe n r al y o g aDn evdic eto s i p s bla eli c evee d otro dbe e ras: cc uH ratite tiatne d M reli iac bl reo . w Ho av wev e er , Cno o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O P r h d o e ne r O : 7 n 81- -3li 2n 9 e - 4 a 7 t 0 ww 0 • O w rd .h e it r o tniltie n .c e ao t m
7 - 3
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p li coarti o ap n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v02.0609
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 28 - 36 GHz
7
P1dB vs. Temperature Psat vs. Temperature
T 18 18 m 16 16 s 14 14 12 12 e - (dBm) (dBm) 10 10 is P1dB Psat o 8 8 +25 C +25 C +85 C +85 C 6 - 40 C 6 - 40 C 4 4 w N 26 28 30 32 34 36 38 26 28 30 32 34 36 38 FREQUENCY (GHz) FREQUENCY (GHz) lo s -
Output IP3 vs. Temperature Power Compression @ 32 GHz
r 30 25 ie ) 28 (% 20 E lif 26 A p ), P Pout 24 15 Gain (dB m PAE (dB) IN 22 A A IP3 ), G 10 20 +25 C m +85 C 18 - 40 C 5 out (dB P 16 14 0 26 28 30 32 34 36 38 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 FREQUENCY (GHz) INPUT POWER (dBm)
Gain, Noise Figure & Power vs. Supply Voltage @ 32 GHz Absolute Maximum Ratings
30 10 Drain Bias Voltage (Vdd1, 2, 3, 4) +3.5 V 27 9 rf input power (rfiN)(Vdd = +3 Vdc) +5 dBm 24 8 N Channel Temperature 175 °C 21 7 O (dBm) Gain IS P1dB E Continuous pdiss (T= 85 °C) 18 6 F 0.8 w I (derate 9.6 mw/°C above 85 °C) P1dB 15 5 GUR Thermal resistance 12 4 (dB), E 104 °C/w (d (channel to ground paddle) 9 3 B Noise Figure ) GAIN storage Temperature -65 to +150 °C 6 2 3 1 operating Temperature -40 to +85 °C 0 0 2.5 3 3.5 Vdd (V) eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs Info F rmoatri op n rfiurcne is ,h ed d ebly ivAe n r al y o g aDn evdic eto s i p s bla eli c evee d otro dbe e ras: cc uH ratite tiatne d M reli iac bl reo . w Ho av wev e er , Cno o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O P r h d o e ne r O : 7 n 81- -3li 2n 9 e - 4 a 7 t 0 ww 0 • O w rd .h e it r o tniltie n .c e ao t m
7 - 3
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p li coarti o ap n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D