Datasheet HMC8400 (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | 2 GHz to 30 GHz, GaAs pHEMT MMIC Low Noise Amplifier |
| 页数 / 页 | 15 / 5 — Data Sheet. HMC8400. ABSOLUTE MAXIMUM RATINGS Table 4. Parameter. Rating. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC8400. ABSOLUTE MAXIMUM RATINGS Table 4. Parameter. Rating. ESD CAUTION
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文件文字版本
Data Sheet HMC8400 ABSOLUTE MAXIMUM RATINGS Table 4.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (VDD) 8 V stress rating only; functional operation of the product at these Second Gate Bias Voltage (VGG2) −2.5 V to +3 V or any other conditions above those indicated in the operational RF Input Power (RFIN) 23 dBm section of this specification is not implied. Operation beyond Channel Temperature 175°C the maximum operating conditions for extended periods may Continuous Power Dissipation (PDISS), 1.55 W affect product reliability. TA = 85°C (Derate 17.2 mW/°C Above 85°C)
ESD CAUTION
Thermal Resistance, θJA (Channel to 58°C/W Bottom Die) Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) 250 V (Class 1A) Rev. B | Page 5 of 15 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS 2 GHz TO 6 GHz FREQUENCY RANGE 6 GHz TO 20 GHz FREQUENCY RANGE 20 GHz TO 30 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION BIASING PROCEDURES MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a Drain Bias Voltage (VDD) 8 V stress rating only; functional operation of the product at these Second Gate Bias Voltage (VGG2) −2.5 V to +3 V or any other conditions above those indicated in the operational RF Input Power (RFIN) 23 dBm section of this specification is not implied. Operation beyond Channel Temperature 175°C the maximum operating conditions for extended periods may Continuous Power Dissipation (PDISS), 1.55 W affect product reliability. TA = 85°C (Derate 17.2 mW/°C Above 85°C)
ESD CAUTION
Thermal Resistance, θJA (Channel to 58°C/W Bottom Die) Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C ESD Sensitivity, Human Body Model (HBM) 250 V (Class 1A) Rev. B | Page 5 of 15 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS 2 GHz TO 6 GHz FREQUENCY RANGE 6 GHz TO 20 GHz FREQUENCY RANGE 20 GHz TO 30 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION BIASING PROCEDURES MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE