50 GHz to 95 GHz, GaAs, pHEMT, MMIC,Wideband Low Noise AmplifierData SheetADL7003FEATURESFUNCTIONAL BLOCK DIAGRAMGain: 14 dB typical Noise figure: 5 dB typical234567Input return loss (S11): 15 dB typical1A2A3A4A12A34AOutput return loss (S22): 20 dB typicalDDDDDDDDGGVVGGVVVVOutput power for 1 dB compression (P1dB): 14 dBm typical Saturated output power (PSAT): 18 dBm typical Output third-order intercept (IP3): 21 dBm typical Supply voltage: 3 V at 120 mARFOUT50 Ω matched input/output8Die size: 1.9 mm × 1.9 mm × 0.05 mm APPLICATIONSADL7003Test instrumentationRFIN1Military and space Telecommunications infrastructure12B1B2B34B3B4BGGDDDDGGDDDDVVVVVV14131211109 001 15691- Figure 1. GENERAL DESCRIPTION The ADL7003 is a gal ium arsenide (GaAs), pseudomorphic to 90 GHz, the ADL7003 provides 15 dB (typical) of gain, high electron mobility transistor (pHEMT), monolithic 21 dBm output IP3, and 14 dBm of output power for1 dB gain microwave integrated circuit (MMIC), balanced