Datasheet HMC8412CHIPS (Analog Devices) - 5
| 制造商 | Analog Devices |
| 描述 | Low Noise Amplifier, 0.4 GHz to 10 GHz |
| 页数 / 页 | 21 / 5 — Data Sheet. HMC8412CHIPS. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. … |
| 文件格式/大小 | PDF / 489 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC8412CHIPS. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. BIAS. VDD. TOP VIEW. (CIRCUIT SIDE). RFOUT
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Data Sheet HMC8412CHIPS PIN CONFIGURATION AND FUNCTION DESCRIPTIONS R 2 BIAS 3 VDD HMC8412CHIPS TOP VIEW (CIRCUIT SIDE) RF 1 4 IN RFOUT
002 24012- Figure 2. Pad Configuration
Table 6. Pad Function Descriptions Pad No. Mnemonic Description
1 RFIN RF Input. The RFIN pad is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic. GND Ground. The GND pads must be connected to the RF and dc ground. See Figure 6 for the interface schematic. 2 RBIAS Bias Resistor. See Figure 3 for the interface schematic. 3 VDD Drain Bias Voltage for the Amplifier. See Figure 5 for the interface schematic. 4 RFOUT RF Output. The RFOUT pad is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
INTERFACE SCHEMATICS RBIAS VDD RFOUT
003 005 24012- 24012- Figure 3. RBIAS Interface Schematic Figure 5. RFOUT and VDD Interface Schematic
GND
006
RFIN
004 24012- 24012- Figure 4. RFIN Interface Schematic Figure 6. GND Interface Schematic Rev. 0 | Page 5 of 21 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 8 GHz Frequency Range 8 GHz to 10 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412CHIPS ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Small Signal Response Large Signal Response Theory of Operation Applications Information Typical Application Circuit Recommended Bias Sequencing During Power-Up During Power-Down Assembly Diagram Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Outline Dimensions Ordering Guide
Data Sheet HMC8412CHIPS PIN CONFIGURATION AND FUNCTION DESCRIPTIONS R 2 BIAS 3 VDD HMC8412CHIPS TOP VIEW (CIRCUIT SIDE) RF 1 4 IN RFOUT
002 24012- Figure 2. Pad Configuration
Table 6. Pad Function Descriptions Pad No. Mnemonic Description
1 RFIN RF Input. The RFIN pad is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic. GND Ground. The GND pads must be connected to the RF and dc ground. See Figure 6 for the interface schematic. 2 RBIAS Bias Resistor. See Figure 3 for the interface schematic. 3 VDD Drain Bias Voltage for the Amplifier. See Figure 5 for the interface schematic. 4 RFOUT RF Output. The RFOUT pad is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic.
INTERFACE SCHEMATICS RBIAS VDD RFOUT
003 005 24012- 24012- Figure 3. RBIAS Interface Schematic Figure 5. RFOUT and VDD Interface Schematic
GND
006
RFIN
004 24012- 24012- Figure 4. RFIN Interface Schematic Figure 6. GND Interface Schematic Rev. 0 | Page 5 of 21 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 8 GHz Frequency Range 8 GHz to 10 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412CHIPS ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Small Signal Response Large Signal Response Theory of Operation Applications Information Typical Application Circuit Recommended Bias Sequencing During Power-Up During Power-Down Assembly Diagram Mounting and Bonding Techniques for Millimeter Wave GaAs MMICs Handling Precautions Outline Dimensions Ordering Guide