Datasheet HMC415LP3, 415LP3E (Analog Devices) - 5

制造商Analog Devices
描述GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
页数 / 页8 / 5 — HMC415LP3 / 415LP3E. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 4.9 - 5.9 GHz. …
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HMC415LP3 / 415LP3E. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 4.9 - 5.9 GHz. Absolute Maximum Ratings. Outline Drawing

HMC415LP3 / 415LP3E GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Absolute Maximum Ratings Outline Drawing

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HMC415LP3 / 415LP3E
v03.0605
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5Vdc Control Voltage (Vpd) +3.5 Vdc ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RF Input Power (RFIN)(Vs = Vpd = +3.0 Vdc) +13 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) 1.105 W (derate 17 mW/°C above 85 °C) 11 Thermal Resistance 59 °C/W (junction to ground paddle) Storage Temperature -65 to +150 °C T Operating Temperature -40 to +85 °C - SM
Outline Drawing
S R IE IF L P M R A E W O NOTES: & P 1. LEADFRAME MATERIAL: COPPER ALLOY R 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] A 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. E PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. IN 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. L 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] 415 HMC415LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] 415 HMC415LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
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