Datasheet HMC609 (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| 页数 / 页 | 6 / 1 — HMC609. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Typical … |
| 文件格式/大小 | PDF / 337 Kb |
| 文件语言 | 英语 |
HMC609. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC609
v03.0210
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
1
Typical Applications Features
The HMC609 is ideal for: Excellent Gain Flatness: ±0.2 dB IP • Fixed Microwave High Gain: 20.5 dB H • Point-to-Multi-Point Radios Low Noise Figure: 3 dB • Test & Measurement Equipment Output IP3: +36 dBm E - C • Radar & Sensors Output P1dB: +22 dBm IS • Military & Space 50 Ohm Matched Input/Output Die Size: 2.1 x 1.3 x 0.1 mm
Functional Diagram General Description
W NO O The HMC609 is a GaAs PHEMT MMIC Low Noise Amplifi er (LNA) chip which operates from 2 to 4 GHz. The HMC609 features extremely fl at performance S - L characteristics including 20 dB of small signal gain, R 3.0 dB of noise fi gure and output IP3 of +36 dBm IE across the operating band. This versatile LNA is ideal IF for hybrid and MCM assemblies due to its compact L size, consistent output power and DC blocked RF I/ P O’s. All data is measured with the chip in a 50 Ohm test M fi xture connected via two 0.025 mm (1 mil) diameter A bondwires of minimal length 0.31 mm (12 mil).
Electrical Specifi cations, T = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA * A
Parameter Min. Typ. Max. Units Frequency Range 2 - 4 GHz Gain 19 20.5 dB Gain Variation Over Temperature 0.005 0.01 dB/ °C Noise Figure 3 4 dB Input Return Loss 20 dB Output Return Loss 17 dB Output Power for 1 dB 18 21 dBm Compression (P1dB) Saturated Output Power (Psat) 22 dBm Output Third Order Intercept (IP3) 36 dBm Supply Current (Idd1 + Idd2) 170 220 mA *Adjust Vgg1 = Vgg2 between -1.5V to -0.5V (typ. -0.9V) to achieve total drain bias of 170mA Inf F or o mar pr tion f ic ur e, de nished bliy ve An ralyo a g n De d to p vices is lbaelc ie e o ved trde o b r e s a : H ccuraittt e itae M nd reliicr abl ow e. H a o v we e C ver, noo rpo F roa r ti p o ri n c , e 2 , d0el A iv lepha R ry, and otad, C o plac h e e o lm rde s rsfo : rd, MA 01 Analog Devi 8 c 2 es 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 108
Phone: 978-250-3343 Fax: 978-250-3373 O P rde hon r O e: 7 n 81 - - l3in 2 e a 9-47 t w 0 ww 0 • O . rd h e itt r o i nte lin .co e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r app ation Su sp@ pohrtitti : P te ho .c ne om : 1-800-ANALOG-D
v03.0210
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
1
Typical Applications Features
The HMC609 is ideal for: Excellent Gain Flatness: ±0.2 dB IP • Fixed Microwave High Gain: 20.5 dB H • Point-to-Multi-Point Radios Low Noise Figure: 3 dB • Test & Measurement Equipment Output IP3: +36 dBm E - C • Radar & Sensors Output P1dB: +22 dBm IS • Military & Space 50 Ohm Matched Input/Output Die Size: 2.1 x 1.3 x 0.1 mm
Functional Diagram General Description
W NO O The HMC609 is a GaAs PHEMT MMIC Low Noise Amplifi er (LNA) chip which operates from 2 to 4 GHz. The HMC609 features extremely fl at performance S - L characteristics including 20 dB of small signal gain, R 3.0 dB of noise fi gure and output IP3 of +36 dBm IE across the operating band. This versatile LNA is ideal IF for hybrid and MCM assemblies due to its compact L size, consistent output power and DC blocked RF I/ P O’s. All data is measured with the chip in a 50 Ohm test M fi xture connected via two 0.025 mm (1 mil) diameter A bondwires of minimal length 0.31 mm (12 mil).
Electrical Specifi cations, T = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA * A
Parameter Min. Typ. Max. Units Frequency Range 2 - 4 GHz Gain 19 20.5 dB Gain Variation Over Temperature 0.005 0.01 dB/ °C Noise Figure 3 4 dB Input Return Loss 20 dB Output Return Loss 17 dB Output Power for 1 dB 18 21 dBm Compression (P1dB) Saturated Output Power (Psat) 22 dBm Output Third Order Intercept (IP3) 36 dBm Supply Current (Idd1 + Idd2) 170 220 mA *Adjust Vgg1 = Vgg2 between -1.5V to -0.5V (typ. -0.9V) to achieve total drain bias of 170mA Inf F or o mar pr tion f ic ur e, de nished bliy ve An ralyo a g n De d to p vices is lbaelc ie e o ved trde o b r e s a : H ccuraittt e itae M nd reliicr abl ow e. H a o v we e C ver, noo rpo F roa r ti p o ri n c , e 2 , d0el A iv lepha R ry, and otad, C o plac h e e o lm rde s rsfo : rd, MA 01 Analog Devi 8 c 2 es 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 108
Phone: 978-250-3343 Fax: 978-250-3373 O P rde hon r O e: 7 n 81 - - l3in 2 e a 9-47 t w 0 ww 0 • O . rd h e itt r o i nte lin .co e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r app ation Su sp@ pohrtitti : P te ho .c ne om : 1-800-ANALOG-D