Datasheet BUK7V4R2-40H (Nexperia) - 5
| 制造商 | Nexperia |
| 描述 | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) |
| 页数 / 页 | 13 / 5 — Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level … |
| 修订版 | 11022021 |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
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Nexperia BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032383 10 Zt Z ht(j(-m - b) b (K/ K W) W 1 δ δ= =0 .5. 0. 0 2 0. 0 1 tp 10-1 0. 0 05 0 P δ = T 0. 0 02 0 sing n l g e e sh s ot o t tp T 10-210-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and FET2 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics FET1 and FET2
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; 2.4 3 3.6 V voltage Fig. 10 ID = 1 mA; VDS=VGS; Tj = 175 °C; 1 - - V Fig. 10 ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 4.3 V IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.007 1 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 0.3 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 53 500 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C; 2.5 3.5 4.2 mΩ resistance Fig. 11 VGS = 10 V; ID = 20 A; Tj = 105 °C; 3.4 5.2 6.4 mΩ Fig. 12 VGS = 10 V; ID = 20 A; Tj = 125 °C; 3.7 5.8 7.2 mΩ Fig. 12 VGS = 10 V; ID = 20 A; Tj = 175 °C; 4.5 7.2 8.8 mΩ Fig. 12 RG gate resistance f = 1 MHz; Tj = 25 °C 0.72 1.8 4.5 Ω
Dynamic characteristics FET1 and FET2
QG(tot) total gate charge ID = 20 A; VDS = 32 V; VGS = 10 V; - 26 37 nC Q T GS gate-source charge j = 25 °C; Fig. 13; Fig. 14 - 7.8 12 nC QGD gate-drain charge - 4.7 9.4 nC BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 5 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032383 10 Zt Z ht(j(-m - b) b (K/ K W) W 1 δ δ= =0 .5. 0. 0 2 0. 0 1 tp 10-1 0. 0 05 0 P δ = T 0. 0 02 0 sing n l g e e sh s ot o t tp T 10-210-6 10-5 10-4 10-3 10-2 10-1 1 tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and FET2 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics FET1 and FET2
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 43 - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -40 °C - 40.5 - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 40 - V VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; 2.4 3 3.6 V voltage Fig. 10 ID = 1 mA; VDS=VGS; Tj = 175 °C; 1 - - V Fig. 10 ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10 - - 4.3 V IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.007 1 µA VDS = 16 V; VGS = 0 V; Tj = 125 °C - 0.3 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - 53 500 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state VGS = 10 V; ID = 20 A; Tj = 25 °C; 2.5 3.5 4.2 mΩ resistance Fig. 11 VGS = 10 V; ID = 20 A; Tj = 105 °C; 3.4 5.2 6.4 mΩ Fig. 12 VGS = 10 V; ID = 20 A; Tj = 125 °C; 3.7 5.8 7.2 mΩ Fig. 12 VGS = 10 V; ID = 20 A; Tj = 175 °C; 4.5 7.2 8.8 mΩ Fig. 12 RG gate resistance f = 1 MHz; Tj = 25 °C 0.72 1.8 4.5 Ω
Dynamic characteristics FET1 and FET2
QG(tot) total gate charge ID = 20 A; VDS = 32 V; VGS = 10 V; - 26 37 nC Q T GS gate-source charge j = 25 °C; Fig. 13; Fig. 14 - 7.8 12 nC QGD gate-drain charge - 4.7 9.4 nC BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 5 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents