Datasheet PUSB3BB2DF (Nexperia) - 4
| 制造商 | Nexperia |
| 描述 | Extremely low clamping low capacitance ESD protection |
| 页数 / 页 | 12 / 4 — Nexperia. PESD5V0C2BDF. Extremely low clamping low capacitance ESD … |
| 修订版 | 23072020 |
| 文件格式/大小 | PDF / 276 Kb |
| 文件语言 | 英语 |
Nexperia. PESD5V0C2BDF. Extremely low clamping low capacitance ESD protection. 9. Characteristics Table 6. Characteristics
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Nexperia PESD5V0C2BDF Extremely low clamping low capacitance ESD protection 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit
VBR breakdown voltage IR = 1 mA; Tamb = 25 °C - 9.6 - V IRM reverse leakage current VRWM = 5 V; Tamb = 25 °C - 1 30 nA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.21 0.25 pF f = 1 MHz; VR = 1.5 V; Tamb = 25 °C - 0.19 - pF VCL clamping voltage IPPM = 8 A; 8/20 µs; Tamb = 25 °C [1] - 5.4 - V IPPM = 8 A; TLP; tp = 100 ns; [2] - 4.5 - V Tamb = 25 °C IPPM = 16 A; TLP; tp = 100 ns; [2] - 6.5 - V Tamb = 25 °C Rdyn dynamic resistance IR = 10 A; Tamb = 25 °C [2] - 0.23 - Ω IR = -10 A; Tamb = 25 °C [2] - 0.23 - Ω f-3dB -3 dB cut-off frequency Tamb = 25 °C; normalized to attenuation - > 12.5 - GHz at 1 MHz [1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008. aaa-031957 1 aaa-031958 0.4 Cd Sdd21 (pF) (dB) 0.3 -1 0.2 -3 0.1 -5 0 108 1011 1010 109 -5 -3 -1 1 3 5 f (Hz) VI (V)
Fig. 3. Insertion loss; typical values Fig. 4. Capacitance as a function of input voltage; typical values
PESD5V0C2BDF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved
Product data sheet 23 July 2020 4 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents
Nexperia PESD5V0C2BDF Extremely low clamping low capacitance ESD protection 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit
VBR breakdown voltage IR = 1 mA; Tamb = 25 °C - 9.6 - V IRM reverse leakage current VRWM = 5 V; Tamb = 25 °C - 1 30 nA Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.21 0.25 pF f = 1 MHz; VR = 1.5 V; Tamb = 25 °C - 0.19 - pF VCL clamping voltage IPPM = 8 A; 8/20 µs; Tamb = 25 °C [1] - 5.4 - V IPPM = 8 A; TLP; tp = 100 ns; [2] - 4.5 - V Tamb = 25 °C IPPM = 16 A; TLP; tp = 100 ns; [2] - 6.5 - V Tamb = 25 °C Rdyn dynamic resistance IR = 10 A; Tamb = 25 °C [2] - 0.23 - Ω IR = -10 A; Tamb = 25 °C [2] - 0.23 - Ω f-3dB -3 dB cut-off frequency Tamb = 25 °C; normalized to attenuation - > 12.5 - GHz at 1 MHz [1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008. aaa-031957 1 aaa-031958 0.4 Cd Sdd21 (pF) (dB) 0.3 -1 0.2 -3 0.1 -5 0 108 1011 1010 109 -5 -3 -1 1 3 5 f (Hz) VI (V)
Fig. 3. Insertion loss; typical values Fig. 4. Capacitance as a function of input voltage; typical values
PESD5V0C2BDF All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. All rights reserved
Product data sheet 23 July 2020 4 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Characteristics 10. Application information 11. Package outline 12. Soldering 13. Revision history 14. Legal information Contents