Datasheet T2035H-8I (STMicroelectronics) - 5

T2035H-8I Characteristics (curves) Figure 8. Relative variation of holding current and Figure 7. Relative variation of gate trigger voltage and latching current versus junction temperature (typical current versus junction temperature (typical values) values)
IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] IH,IL [Tj] / IH,IL [Tj = 25 °C] 2.5 1.6 I I H 2 GT Q3 1.2 IGT Q1-Q2 IL 1.5 0.8 1 VGT Q1-Q2-Q3 0.5 0.4 Tj (°C) Tj (°C) 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150
Figure 9. Surge peak on-state current versus number of Figure 10. Non repetitive surge peak on-state current for a cycles sinusoidal pulse with width tp < 10 ms
I ITSM(A) TSM(A) 10000 250 Tj initial=25°C 200 t=20ms Non repetitive One cycle Tj initial = 25 °C 1000 150 dI/dt limitation: 100A/µs ITSM 100 Repetitive 100 Tc = 108°C 50 t p (ms) Number of cycles 0 10 1 10 100 1000 0.01 0.10 1.00 10.00
Figure 11. Relative variation of static dV/dt immunity Figure 12. Relative variation of critical rate of decrease of versus junction temperature main current versus junction temperature
dV/dt [Tj] / dV/dt [Tj = 150 °C] (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] 4 14 V 12 D = VR = 536 V 3 10 8 2 6 4 1 2 Tj(°C) Tj(°C) 0 0 25 50 75 100 125 150 25 50 75 100 125 150
DS13132
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Rev 3 page 5/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history