Datasheet AUIRL7732S2TR, AUIRL7732S2TR1 (International Rectifier) - 2

制造商International Rectifier
描述Automotive Grade. DirectFET Power MOSFET
页数 / 页11 / 2 — Static Characteristics @ TJ = 25°C (unless otherwise stated). Parameter. …
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Static Characteristics @ TJ = 25°C (unless otherwise stated). Parameter. Min. Typ. Max. Units. Conditions

Static Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min Typ Max Units Conditions

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AUIRL7732S2TR/TR1
Static Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 5.0 6.6 mΩ VGS = 10V, ID = 35A i ––– 7.5 10.5 VGS = 4.5V, ID = 29A i VGS(th) Gate Threshold Voltage 1.0 1.8 2.5 V V ΔV DS = VGS, ID = 50μA GS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -7.1 ––– mV/°C gfs Forward Transconductance 64 ––– ––– S VDS = 10V, ID = 35A RG Gate Resistance ––– 0.64 ––– Ω IDSS Drain-to-Source Leakage Current ––– ––– 5 μA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 22 33 VDS = 20V Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 ––– VGS = 4.5V Qgs2 Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC ID = 35A Qgd Gate-to-Drain ("Miller") Charge ––– 13 ––– See Fig.11 Qgodr Gate Charge Overdrive ––– 2.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 15.8 ––– Qoss Output Charge ––– 13 ––– nC VDS = 16V, VGS = 0V td(on) Turn-On Delay Time ––– 21 ––– VDD = 20V, VGS = 4.5Vi tr Rise Time ––– 123 ––– ns ID = 35A td(off) Turn-Off Delay Time ––– 22 ––– RG = 6.8Ω tf Fall Time ––– 37 ––– Ciss Input Capacitance ––– 2020 ––– VGS = 0V Coss Output Capacitance ––– 410 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 210 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1460 ––– VGS = 0V, VDS = 1.0V, f=1.0MHz Coss Output Capacitance ––– 365 ––– VGS = 0V, VDS = 32V, f=1.0MHz Coss eff. Effective Output Capacitance ––– 630 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated) Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D ––– ––– 58 (Body Diode) A showing the G ISM Pulsed Source Current integral reverse ––– ––– 230 S (Body Diode)g p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V IS = 35A, VGS = 0V i trr Reverse Recovery Time ––– 23 35 ns IF = 35A, VDD = 20V Qrr Reverse Recovery Charge ––– 16 24 nC di/dt = 100A/μs i ƒ Surface mounted on 1 in. square Cu ‰ Mounted to a PCB with small ‰ Mounted on minimum footprint full size (still air). clip heatsink (still air) board with metalized back and with small clip heatsink (still air) Notes  through Š are on page 11 2 www.irf.com