Datasheet 2N3055, MJ2955 (ON Semiconductor) - 3

制造商ON Semiconductor
描述Complementary Silicon Power Transistors
页数 / 页5 / 3 — 2N3055(NPN), MJ2955(PNP). Figure 3. DC Current Gain, 2N3055 (NPN). Figure …
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2N3055(NPN), MJ2955(PNP). Figure 3. DC Current Gain, 2N3055 (NPN). Figure 4. DC Current Gain, MJ2955 (PNP)

2N3055(NPN), MJ2955(PNP) Figure 3 DC Current Gain, 2N3055 (NPN) Figure 4 DC Current Gain, MJ2955 (PNP)

该数据表的模型线

文件文字版本

2N3055(NPN), MJ2955(PNP)
500 200 VCE = 4.0 V V 300 T CE = 4.0 V J = 150°C T 200 J = 150°C 100 25°C 25°C GAIN 100 GAIN 70 −55 °C 70 −55 °C 50 50 30 30 , DC CURRENT , DC CURRENT 20 h FE h FE 20 10 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP)
TS) 2.0 TS) 2.0 T T (VOL J = 25°C (VOL J = 25°C 1.6 1.6 TAGE IC = 1.0 A 4.0 A 8.0 A TAGE IC = 1.0 A 4.0 A 8.0 A VOL VOL 1.2 1.2 0.8 0.8 OR−EMITTER OR−EMITTER 0.4 0.4 , COLLECT , COLLECT V CE 0 V CE 0 5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 5. Collector Saturation Region, Figure 6. Collector Saturation Region, 2N3055 (NPN) MJ2955 (PNP)
1.4 2.0 TJ = 25°C T 1.2 J = 25°C 1.6 1.0 TS) TS) (VOL 0.8 1.2 VBE(sat) @ IC/IB = 10 V (VOL BE(sat) @ IC/IB = 10 TAGE V 0.6 BE @ VCE = 4.0 V V TAGE BE @ VCE = 4.0 V 0.8 V, VOL 0.4 V, VOL 0.4 0.2 V V CE(sat) @ IC/IB = 10 CE(sat) @ IC/IB = 10 0 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMP)
Figure 7. “On” Voltages, 2N3055 (NPN) Figure 8. “On” Voltages, MJ2955 (PNP) http://onsemi.com 3