Datasheet IQE013N04LM6CG (Infineon)

制造商Infineon
描述OptiMOS Power-MOSFET, 40V
页数 / 页13 / 1 — IQE013N04LM6CG. MOSFET OptiMOSTMPower-MOSFET,40V. Features. …
修订版02_00
文件格式/大小PDF / 1.4 Mb
文件语言英语

IQE013N04LM6CG. MOSFET OptiMOSTMPower-MOSFET,40V. Features. Productvalidation. Table1KeyPerformanceParameters. Parameter. Value. Unit

Datasheet IQE013N04LM6CG Infineon, 修订版: 02_00

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文件文字版本

IQE013N04LM6CG MOSFET OptiMOSTMPower-MOSFET,40V
PG-TTFN-9-1 1
Features
2 3 4 •Optimizedforsynchronousrectification 9 •Verylowon-stateresistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel 8 •Pb-freeleadplating;RoHScompliant 7 6 5 •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 5-8
Table1KeyPerformanceParameters
Gate Pin 9
Parameter Value Unit
Source VDS 40 V Pin 1-4 RDS(on),max 1.35 mΩ ID 205 A Qoss 45 nC Qg(0V..10V) 41 nC
Type/OrderingCode Package Marking RelatedLinks
IQE013N04LM6CG PG-TTFN-9-1 01304C6 - Final Data Sheet 1 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer