Datasheet K6R1016V1D (Samsung) - 11
| 制造商 | Samsung |
| 描述 | CMOS SRAM |
| 页数 / 页 | 11 / 11 — for AT&T. K6R1016V1D. CMOS SRAM. PACKAGE DIMENSION. 48 TAPE BALL GRID … |
| 文件格式/大小 | PDF / 269 Kb |
| 文件语言 | 英语 |
for AT&T. K6R1016V1D. CMOS SRAM. PACKAGE DIMENSION. 48 TAPE BALL GRID ARRAY(0.75mm ball pitch). Min. Typ. Max. Revision 3.0
该数据表的模型线
文件文字版本
for AT&T K6R1016V1D CMOS SRAM PACKAGE DIMENSION
Unit: millimeters
48 TAPE BALL GRID ARRAY(0.75mm ball pitch)
Top View Bottom View B B1 B 6 5 4 3 2 1 A B #A1 C D 1 C C C E /2 F 1 C G H B/2 Side View Detail A E D A 2 . p y /T E 5 E .3 Y 1 0 . p C y /T 5 .5 0
Min Typ Max
A - 0.75 - Notes. B 5.90 6.00 6.10 1. Bump counts: 48(8 row x 6 column) B1 - 3.75 - 2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.) C 6.90 7.00 7.10 3. All tolerence are +/-0.050 unless otherwise specified. C1 - 5.25 - 4. Typ: Typical D 0.40 0.45 0.50 5. Y is coplanarity: 0.08(Max) E 0.80 0.90 1.00 E1 - 0.55 - E2 0.30 0.35 0.40 Y - - 0.08
Revision 3.0
- 11
June 2002
Unit: millimeters
48 TAPE BALL GRID ARRAY(0.75mm ball pitch)
Top View Bottom View B B1 B 6 5 4 3 2 1 A B #A1 C D 1 C C C E /2 F 1 C G H B/2 Side View Detail A E D A 2 . p y /T E 5 E .3 Y 1 0 . p C y /T 5 .5 0
Min Typ Max
A - 0.75 - Notes. B 5.90 6.00 6.10 1. Bump counts: 48(8 row x 6 column) B1 - 3.75 - 2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.) C 6.90 7.00 7.10 3. All tolerence are +/-0.050 unless otherwise specified. C1 - 5.25 - 4. Typ: Typical D 0.40 0.45 0.50 5. Y is coplanarity: 0.08(Max) E 0.80 0.90 1.00 E1 - 0.55 - E2 0.30 0.35 0.40 Y - - 0.08
Revision 3.0
- 11
June 2002