Datasheet SiZF300DT (Vishay) - 10

制造商Vishay
描述Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
页数 / 页13 / 10 — SiZF300DT. CHANNEL-2 TYPICAL CHARACTERISTICS. Current Derating a. Power, …
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SiZF300DT. CHANNEL-2 TYPICAL CHARACTERISTICS. Current Derating a. Power, Junction-to-Case. Note

SiZF300DT CHANNEL-2 TYPICAL CHARACTERISTICS Current Derating a Power, Junction-to-Case Note

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SiZF300DT
www.vishay.com Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 160 10000 100 10000 80 ) 120 1000 1000 ) 60 rrent (A ne ne ine u ine ne ne 80 r (W C e n 1st li w 2nd li 2nd l 1st li 2nd l o 2nd li rai 40 P D 100 100 - I D 40 20 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Case Temperature (°C) C C 2nd line 2nd line
Current Derating a Power, Junction-to-Case Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0479-Rev. A, 30-Apr-2018
10
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