Datasheet STX817A (STMicroelectronics) - 4

制造商STMicroelectronics
描述PNP Medium power transistor
页数 / 页9 / 4 — Electrical characteristics. STX817A. Electrical. characteristics. Table …
文件格式/大小PDF / 143 Kb
文件语言英语

Electrical characteristics. STX817A. Electrical. characteristics. Table 3. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit

Electrical characteristics STX817A Electrical characteristics Table 3 Symbol Parameter Test Conditions Min Typ Max Unit

该数据表的模型线

文件文字版本

Electrical characteristics STX817A 2 Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit
Col ector cut-off current ICES V (V CE =-80V -500 µA BE =0) Col ector cut-off current ICEO V (I CE =-80V -1 mA B =0) Emitter cut-off current IEBO V (I EB =-5V -100 µA C =0) V (1) Col ector-emitter CEO(sus) I sustaining voltage (I C =-10mA -80 V B =0) IC =-100mA IB =-10mA -0.25 V V (1) Col ector-emitter CE(sat) saturation voltage IC =-1A IB =-100mA -0.5 V IC =-100mA IB =-10mA -1 V V (1) Base-emitter saturation BE(sat) voltage IC =-1A IB =-100mA -1.1 V IC =-100mA VCE =-2V 140 h (1) I FE DC current gain C =-500mA VCE =-2V 80 IC =-1A VCE =- 2V 25 ft Transition frequency IC =-0.1A VCE =-10V 50 MHz Note (1) Pulsed duration = 300µs, duty cycle ≤1.5% 4/9 Document Outline 1 Electrical ratings Table 1. Absolute maximum rating 2 Electrical characteristics Table 3. Electrical characteristics 3 Package mechanical data 4 Revision history Table 4. Revision history