Datasheet PMEG120G20ELP (Nexperia) - 3

制造商Nexperia
描述120 V, 2 A Silicon Germanium (SiGe) rectifier
页数 / 页14 / 3 — Nexperia. PMEG120G20ELP. 120 V, 2 A Silicon Germanium (SiGe) rectifier
修订版26052020
文件格式/大小PDF / 251 Kb
文件语言英语

Nexperia. PMEG120G20ELP. 120 V, 2 A Silicon Germanium (SiGe) rectifier

Nexperia PMEG120G20ELP 120 V, 2 A Silicon Germanium (SiGe) rectifier

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Nexperia PMEG120G20ELP 120 V, 2 A Silicon Germanium (SiGe) rectifier 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air [1] - - 200 K/W junction to ambient [2] - - 120 K/W Rth(j-sp) thermal resistance from [3] - - 12 K/W junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. aaa-030980 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.50 0.33 0.25 0.20 0.10 10 0.05 0.02 0.01 0 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-030981 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.50 0.33 0.25 0.20 10 0.10 0.05 0.02 0.01 0 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG120G20ELP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2020. Al rights reserved
Product data sheet 26 May 2020 3 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Mounting 15. Revision history 16. Legal information Contents