Datasheet IRLR024NPbF, IRLU024NPbF (Infineon) - 6
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 11 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 文件格式/大小 | PDF / 316 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
该数据表的模型线
文件文字版本
IRLR/U024NPbF 140 J) I D TOP 4.5A (m 120 7.8A 15V gy BOTTOM 11A ner 100 he E L DRIVER VDS anc 80 al RG D.U.T + 60 - VDD lse Av IAS A 20V t 0.01 p Ω 40 ingle Pu
Fig 12a.
Unclamped Inductive Test Circuit S 20 , AS E V = 25V 0 DD A 25 50 75 100 125 150 175 V Starting T , Junction Temperature (°C) (BR)DSS J tp
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator
Fig 12b.
Unclamped Inductive Waveforms Same Type as D.U.T. 50KΩ Q .2µF 12V G .3µF + 10 V V Q D.U.T. DS GS QGD - VGS VG 3mA I I Charge G D Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit S 20 , AS E V = 25V 0 DD A 25 50 75 100 125 150 175 V Starting T , Junction Temperature (°C) (BR)DSS J tp
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator
Fig 12b.
Unclamped Inductive Waveforms Same Type as D.U.T. 50KΩ Q .2µF 12V G .3µF + 10 V V Q D.U.T. DS GS QGD - VGS VG 3mA I I Charge G D Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com