Datasheet ZXCT1010 (Diodes) - 2
| 制造商 | Diodes |
| 描述 | Enhanced High-Side Current Monitor |
| 页数 / 页 | 8 / 2 — A Product Line of. Diodes Incorporated. ZXCT1010. Pin Descriptions. Pin … |
| 文件格式/大小 | PDF / 362 Kb |
| 文件语言 | 英语 |
A Product Line of. Diodes Incorporated. ZXCT1010. Pin Descriptions. Pin Number. Pin Name. Function. Functional Block Diagram
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A Product Line of Diodes Incorporated ZXCT1010 Pin Descriptions Pin Number Pin Name Function
1 NC No connection 2 GND Ground 3 IOUT Output current, proportional to VIN - VLOAD 4 VSENSE- Supply voltage 5 VSENSE+ Connection to load/battery
Functional Block Diagram Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Parameter Rating Unit
Voltage on any pin (relative to IOUT) -0.6 to +20 V Continuous output current, IOUT 25 mA Continuous sense voltage, VSENSE (Note 4) -0.5 to +0.5 V Operating temperature, TA -40 to +85 °C Storage temperature -55 to +125 °C Package power dissipation(@TA = +25°C) SOT25 300 mW Note: 4. Operation above the absolute maximum rating may cause device failure. Operation at absolute maximum ratings, for extended periods, may reduce device reliability
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Limits Symbol Parameter Conditions Units Min Typ Max
VIN VCC range − 2.5
−
20
V VSENSE = 0V 0 0.3 10 µA VSENSE = 10mV 85 100 115 IOUT Output Current (Note 5) VSENSE = 100mV 0.975 1.0 1.025 VSENSE = 200mV 1.95 2.0 2.05 mA VSENSE = 1V 9.7 10.0 10.3 Iq Ground pin current VSENSE = 0V — 3.5 8 µA VSENSE Sense Voltage (Note 6)
0 — 2500 mV ISENSE- VSENSE - Input Current − — — 100 nA ACC Accuracy RSENSE = 0.1Ω; VSENSE = 200mV -2.5 — 2.5 % GM Transconductance, IOUT/VSENSE − — 10000 — µA/V VSENSE(DC) = 10mV, RF PIN = -40dBm (Note 7) — 300 — kHz BW Bandwidth VSENSE(DC) = 100mV, RF PIN = -20dBm (Note — 2 — MHz 7) Notes: 5. Include input offset voltage contribution 6. VSENSE is defined as the differential voltage between VSENSE+ and VSENSE-, VSENSE = VSENSE+ -VSENSE- =VIN-VLOAD = ILOAD * RSENSE 7. -20dBm = 63mVP-P into 50Ω ZXCT1010 2 of 8 March 2014 Document number: DS33442 Rev. 11 - 2
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© Diodes Incorporated
1 NC No connection 2 GND Ground 3 IOUT Output current, proportional to VIN - VLOAD 4 VSENSE- Supply voltage 5 VSENSE+ Connection to load/battery
Functional Block Diagram Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Parameter Rating Unit
Voltage on any pin (relative to IOUT) -0.6 to +20 V Continuous output current, IOUT 25 mA Continuous sense voltage, VSENSE (Note 4) -0.5 to +0.5 V Operating temperature, TA -40 to +85 °C Storage temperature -55 to +125 °C Package power dissipation(@TA = +25°C) SOT25 300 mW Note: 4. Operation above the absolute maximum rating may cause device failure. Operation at absolute maximum ratings, for extended periods, may reduce device reliability
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Limits Symbol Parameter Conditions Units Min Typ Max
VIN VCC range − 2.5
−
20
V VSENSE = 0V 0 0.3 10 µA VSENSE = 10mV 85 100 115 IOUT Output Current (Note 5) VSENSE = 100mV 0.975 1.0 1.025 VSENSE = 200mV 1.95 2.0 2.05 mA VSENSE = 1V 9.7 10.0 10.3 Iq Ground pin current VSENSE = 0V — 3.5 8 µA VSENSE Sense Voltage (Note 6)
0 — 2500 mV ISENSE- VSENSE - Input Current − — — 100 nA ACC Accuracy RSENSE = 0.1Ω; VSENSE = 200mV -2.5 — 2.5 % GM Transconductance, IOUT/VSENSE − — 10000 — µA/V VSENSE(DC) = 10mV, RF PIN = -40dBm (Note 7) — 300 — kHz BW Bandwidth VSENSE(DC) = 100mV, RF PIN = -20dBm (Note — 2 — MHz 7) Notes: 5. Include input offset voltage contribution 6. VSENSE is defined as the differential voltage between VSENSE+ and VSENSE-, VSENSE = VSENSE+ -VSENSE- =VIN-VLOAD = ILOAD * RSENSE 7. -20dBm = 63mVP-P into 50Ω ZXCT1010 2 of 8 March 2014 Document number: DS33442 Rev. 11 - 2
www.diodes.com
© Diodes Incorporated