Datasheet 2ED2181 (4) S06F (J) (Infineon) - 20
| 制造商 | Infineon |
| 描述 | 650 V high-side and low-side gate driver with integrated bootstrap diode |
| 页数 / 页 | 24 / 20 — 2ED2181. (4). S06F. (J). 650. V. high-side. and. low-side. driver. with. … |
| 修订版 | 02_01 |
| 文件格式/大小 | PDF / 926 Kb |
| 文件语言 | 英语 |
2ED2181. (4). S06F. (J). 650. V. high-side. and. low-side. driver. with. integrated. bootstrap. diode. 8. Package. details. Figure. 23. 8. -. Lead. DSO

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2ED2181 (4) S06F (J) 650 V high-side and low-side driver with integrated bootstrap diode 8 Package details Figure 23 8 - Lead DSO (2ED2181S06F) Figure 24 14- Lead DSO (2ED21814S06J) Datasheet 20 of 24 V 2.10 www.infineon.com/soi 2019-09-12 Document Outline Features Product summary Product validation Description 1 Table of contents 2 Block diagram 3 Pin configuration and functionality 3.1 Pin configuration 3.2 Pin functionality 4 Electrical parameters 4.1 Absolute maximum ratings 4.2 Recommended operating conditions 4.3 Static electrical characteristics 4.4 Dynamic electrical characteristics 5 Application information and additional details 5.1 IGBT / MOSFET gate drive 5.2 Switching and timing relationships 5.3 Matched propagation delays 5.4 Input logic compatibility 5.5 Undervoltage lockout 5.6 Bootstrap diode 5.7 Calculating the bootstrap capacitance CBS 5.8 Tolerant to negative tranisents on input pins 5.9 Negative voltage transient tolerance of VS pin 5.10 NTSOA – Negative Transient Safe Operating Area 5.11 Higher headroom for input to output signal transmission with logic operation upto -11 V 5.12 Maximum switching frequency 5.13 PCB layout tips 6 Qualification information0F 7 Related products 8 Package details 9 Part marking information 10 Additional documentation and resources 10.1 Infineon online forum resources 11 Revision history