Datasheet BC817DPN (Nexperia) - 5

Nexperia BC817DPN NPN/PNP general purpose transistor
- 103 mhc326 - 1200 mhc327 VBE VCEsat (mV) (mV) - 1000 - 102 - 800 (1) (1) (2) (2) - 600 - 10 (3) - 400 (3) - 1 - 200 - 10- 1 - 1 - 10 - 102 - 103 - 10- 1 - 1 - 10 - 102 - 103 IC (mA) IC (mA) IC/IB = 10 VCE = -1 V (1) Tamb = 150°C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = 150 °C
Fig. 7. TR2 (PNP): Collector-emitter saturation voltage Fig. 8. TR2 (PNP): Base-emitter voltage as a function as a function of collector current; typical values of collector current; typical values 11. Test information Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
12. Package outline
3.1 1.1 2.7 0.9 6 5 4 0.6 0.2 3.0 1.7 2.5 1.3 pin 1 index 1 2 3 0.40 0.26 0.95 0.25 0.10 1.9 Dimensions in mm 18-03-11
Fig. 9. Package outline SC-74; TSOP6 (SOT457)
BC817DPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 5 / 9
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents