Datasheet STW88N65M5-4 (STMicroelectronics) - 9
| 制造商 | STMicroelectronics |
| 描述 | N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh M5 Power MOSFET in a TO247-4 package |
| 页数 / 页 | 13 / 9 — STW88N65M5-4. Test circuits. Figure 15. Switching times test circuit for. … |
| 文件格式/大小 | PDF / 723 Kb |
| 文件语言 | 英语 |
STW88N65M5-4. Test circuits. Figure 15. Switching times test circuit for. Figure 16. Gate charge test circuit. resistive load
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STW88N65M5-4 Test circuits 3 Test circuits Figure 15. Switching times test circuit for Figure 16. Gate charge test circuit resistive load
VDD 12V 47kΩ 1kΩ 100nF R 2200 3.3 L mF mF IG=CONST VDD Vi=20V=VGMAX 100Ω V D.U.T. D VGS 2200 V R mF 2.7kΩ G G D.U.T. PW 47kΩ GND1 GND2 1kΩ (driver signal) P (power) W GND1 GND2 AM15855v1 AM15856v1
Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit switching and diode recovery times
A A A D L FAST L=100mH G D.U.T. DIODE VD S B 3.3 1000 2200 3.3 B B mF mF mF mF VDD 25 W D VDD G ID RG S Vi D.U.T. GND1 GND2 Pw AM15857v1 GND1 GND2 AM15858v1
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
V(BR)DSS &RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII ,G VD 9GV ,G 7GHOD\RII IDM 9JV 9JV RQ ID 9JV,W VDD VDD 9GV ,G 9GV 7U 7 LVH 7IDOO AM01472v1 7FU RVV RYHU $0Y Doc ID 027754 Rev 1 9/13 13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history
VDD 12V 47kΩ 1kΩ 100nF R 2200 3.3 L mF mF IG=CONST VDD Vi=20V=VGMAX 100Ω V D.U.T. D VGS 2200 V R mF 2.7kΩ G G D.U.T. PW 47kΩ GND1 GND2 1kΩ (driver signal) P (power) W GND1 GND2 AM15855v1 AM15856v1
Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test circuit switching and diode recovery times
A A A D L FAST L=100mH G D.U.T. DIODE VD S B 3.3 1000 2200 3.3 B B mF mF mF mF VDD 25 W D VDD G ID RG S Vi D.U.T. GND1 GND2 Pw AM15857v1 GND1 GND2 AM15858v1
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
V(BR)DSS &RQFHSWZDYHIRUPIRU,QGXFWLYH/RDG7XUQRII ,G VD 9GV ,G 7GHOD\RII IDM 9JV 9JV RQ ID 9JV,W VDD VDD 9GV ,G 9GV 7U 7 LVH 7IDOO AM01472v1 7FU RVV RYHU $0Y Doc ID 027754 Rev 1 9/13 13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history