Datasheet DF2B5M4ASL (Toshiba)

制造商Toshiba
描述ESD Protection Diodes Silicon Epitaxial Planar
页数 / 页9 / 1 — DF2B5M4ASL. ESD. Protection. Diodes. Silicon. Epitaxial. Planar. …
文件格式/大小PDF / 377 Kb
文件语言英语

DF2B5M4ASL. ESD. Protection. Diodes. Silicon. Epitaxial. Planar. DF2B5M4ASL. 1. General. The. DF2B5M4ASL. is. a. TVS. diode. (ESD. protection. diode)

Datasheet DF2B5M4ASL Toshiba

该数据表的模型线

文件文字版本

DF2B5M4ASL ESD Protection Diodes Silicon Epitaxial Planar DF2B5M4ASL 1. General The DF2B5M4ASL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B5M4ASL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B5M4ASL is housed in an ultra-compact package (0.62 mm × 0.32 mm) to meet applications that require a small footprint. 2. Applications Mobile Equipment  Smartphones  Tablets  Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. Features (1) Suitable for use with a 3.3 V signal line. (VRWM ≤ 3.6 V) (2) Protects devices with its high ESD performance. (VESD = ±16 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.7 Ω (typ.)) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 10 V@IPP = 2 A (typ.)) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 mm × 0.32 mm size (Nickname: SL2)) 4. Packaging SL2 Start of commercial production 2019-07 ©2019 1 2019-08-05 Toshiba Electronic Devices & Storage Corporation Rev.1.0