Datasheet BCV61 (Nexperia) - 4
| 制造商 | Nexperia |
| 描述 | NPN general-purpose double transistors |
| 页数 / 页 | 14 / 4 — NXP Semiconductors. BCV61. NPN general-purpose double transistors. … |
| 修订版 | 21012010 |
| 文件格式/大小 | PDF / 262 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. BCV61. NPN general-purpose double transistors. Thermal characteristics. Table 6. Symbol. Parameter. Conditions. Min
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NXP Semiconductors BCV61 NPN general-purpose double transistors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction in free air [1] - - 500 K/W to ambient [1] Device mounted on an FR4 PCB.
7. Characteristics Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Transistor TR1
ICBO collector-base cut-off current VCB = 30 V; - - 15 nA IE = 0 A VCB = 30 V; - - 5 μA IE = 0 A; Tj = 150 °C IEBO emitter-base cut-off current VEB = 5 V; - - 100 nA IC = 0 A hFE DC current gain VCE = 5 V; 100 - - IC = 100 μA VCE = 5 V; 110 - 800 IC = 2 mA VCEsat collector-emitter saturation IC = 10 mA; - 90 250 mV voltage IB = 0.5 mA IC = 100 mA; - 200 600 mV IB = 5 mA V [1] BEsat base-emitter saturation voltage IC = 10 mA; - 700 - mV IB = 0.5 mA I [1] C = 100 mA; - 900 - mV IB = 5 mA V [2] BE base-emitter voltage IC = 2 mA; 580 660 700 mV VCE = 5 V I [2] C = 10 mA; - - 770 mV VCE = 5 V fT transition frequency VCE = 5 V; 100 - - MHz IC = 10 mA; f = 100 MHz Cc collector capacitance VCB = 10 V; - 2.5 - pF IE = ie = 0 A; f = 1 MHz NF noise figure VCE = 5 V; - - 10 dB IC = 200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 3 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
NXP Semiconductors BCV61 NPN general-purpose double transistors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction in free air [1] - - 500 K/W to ambient [1] Device mounted on an FR4 PCB.
7. Characteristics Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Transistor TR1
ICBO collector-base cut-off current VCB = 30 V; - - 15 nA IE = 0 A VCB = 30 V; - - 5 μA IE = 0 A; Tj = 150 °C IEBO emitter-base cut-off current VEB = 5 V; - - 100 nA IC = 0 A hFE DC current gain VCE = 5 V; 100 - - IC = 100 μA VCE = 5 V; 110 - 800 IC = 2 mA VCEsat collector-emitter saturation IC = 10 mA; - 90 250 mV voltage IB = 0.5 mA IC = 100 mA; - 200 600 mV IB = 5 mA V [1] BEsat base-emitter saturation voltage IC = 10 mA; - 700 - mV IB = 0.5 mA I [1] C = 100 mA; - 900 - mV IB = 5 mA V [2] BE base-emitter voltage IC = 2 mA; 580 660 700 mV VCE = 5 V I [2] C = 10 mA; - - 770 mV VCE = 5 V fT transition frequency VCE = 5 V; 100 - - MHz IC = 10 mA; f = 100 MHz Cc collector capacitance VCB = 10 V; - 2.5 - pF IE = ie = 0 A; f = 1 MHz NF noise figure VCE = 5 V; - - 10 dB IC = 200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 3 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents