Datasheet IFR3205 (International Rectifier)

制造商International Rectifier
描述HEXFET Power MOSFET
页数 / 页9 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal …
文件格式/大小PDF / 100 Kb
文件语言英语

Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ

Datasheet IFR3205 International Rectifier

该数据表的模型线

文件文字版本

PD-91279E IRF3205 HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 8.0mΩ l Fast Switching G l Fully Avalanche Rated ID = 110A… S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110 … ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A IDM Pulsed Drain Current  390 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 62 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 www.irf.com 1 01/25/01