Datasheet SPD50P03L G (Infineon) - 5

制造商Infineon
描述OptiMOS -P Power-Transistor
页数 / 页9 / 5 — SPD50P03L G. 5 Typ. output characteristics. 6 Typ. drain-source on …
修订版01_09
文件格式/大小PDF / 395 Kb
文件语言英语

SPD50P03L G. 5 Typ. output characteristics. 6 Typ. drain-source on resistance. 200. 180. 160. 140. 120. [A] 100. (on). DS [V]. D [A]

SPD50P03L G 5 Typ output characteristics 6 Typ drain-source on resistance 200 180 160 140 120 [A] 100 (on) DS [V] D [A]

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文件文字版本

SPD50P03L G 5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
200 15
-10 V -5 V
180
-4.5 V
160
-4 V
140 10
-4.5 V
] 120
Ω -5.5 V
[m [A] 100
-3.5 V
D (on) -I DS 80 R 5
V 6-
60
-3 V -6.5 V -7 V
40
-10 V -2.5 V
20 0 0 0 2 4 6 8 10 0 40 80 120 160 200 -V DS [V] -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
80 100
C °25
70 60
C °175
80 50 60 [A] 40 [S] D-I fsg 30 40 20 20 10 0 0 0 1 2 3 4 0 20 40 60 -V GS [V] -I D [A]
Rev. 1.9 page 5 2012-09-13 Document Outline Untitled