Datasheet NTE491, NTE491SM (NTE Electronics) - 3

制造商NTE Electronics
描述MOSFET N−Ch, Enhancement Mode High Speed Switch
页数 / 页3 / 3 — Electrical Characteristics (Cont’d):. Parameter. Symbol. Test Conditions. …
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Electrical Characteristics (Cont’d):. Parameter. Symbol. Test Conditions. Min. Typ. Max. Unit

Electrical Characteristics (Cont’d): Parameter Symbol Test Conditions Min Typ Max Unit

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Electrical Characteristics (Cont’d):
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Turn−On Time NTE491 ton VDD = 15V, RL = 25Ω, − − 10 ns ID = 500mA, VGS = 10V, RGEN = 25Ω NTE491SM VDD = 30V, RL = 150Ω, − − 20 ns ID = 200mA, VGS = 10V, RGEN = 25Ω Turn−Off Time NTE491 toff VDD = 15V, RL = 25Ω, − − 10 ns ID = 500mA, VGS = 10V, RGEN = 25Ω NTE491SM VDD = 30V, RL = 150Ω, − − 20 ns ID = 200mA, VGS = 10V, RGEN = 25Ω
Drain−Source Diode Charactweristics and Maximum Ratings
(NTE491SM
ONLY)
Maximum Continuous Drain−Source IS − − 115 mA Diode Forward Current Maximum Pulsed Drain−Source ISM − − 0.8 A Diode Forward Current Drain−Source Diode Forward Voltage VSD VGS = 0, IS = 115mA, Note 1 − 0.88 1.5 V Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
NTE491 NTE491SM
.135 (3.45) Min .210 (5.33) .016 (0.48) Max Seating Plane D .098 .500 (2.5) .021 (.445) (12.7) Dia Max G S Max Min .037 (0.95) S G D .074 (1.9) .100 (2.54) .118 (3.0) Max .051 (1.3) .050 (1.27) .043 (1.1) .165 (4.2) Max .007 (0.2) .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max