Datasheet VLMU35CL..-280-120 (Vishay) - 3

制造商Vishay
描述UVC Emitting Diode in SMD Package
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VLMU35CL..-280-120. TYPICAL CHARACTERISTICS

VLMU35CL..-280-120 TYPICAL CHARACTERISTICS

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VLMU35CL..-280-120
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 100 10000 1.0 10000 0.9 R = 46 K/W thJA r ) 80 e 0.8 A w o (m 0.7 1000 1000 60 ant P 0.6 di urrent ne ne ne ine a ne ine 0.5 e R 2nd l v 1st li ard C 40 1st li 2nd li 2nd l 0.4 2nd li ati 100 orw 100 el 0.3 F R - - 20 l I F 0.2 reΦ 0.1 0 10 0 10 0 20 40 60 80 100 250 270 290 310 330 350 T - Ambient Temperature (°C) λ a - Wavelength (nm) 2nd line 2nd line Fig. 1 - Maximum Forward Current vs. Solder Point Temperature Fig. 4 - Relative Spectral Power vs. Wavelength Axis Title Axis Tit 0° le 10° 20° 30° 3.5 10000 3.0 ty ux θ tensi 0° 2.5 ent n 40° ant Fl 1000 θ adi ant I 90° 2.0 di 1.0 ine ne ne ine a ne e R v 50° 1.5 1st li e R 2nd l ati 2nd li 2nd l v 0.9 2nd li el ati R 100 60° - el 1.0 ngular Displacem R 0.8 A el - - l 70° Φ e r ϕ 0.5 I V re 80° 0 10 0 20 40 60 80 0.6 0.4 0.2 0 I - Forward Current (mA) F 1st line 2nd line 2nd line Fig. 2 - Relative Radiant Power vs. Forward Current Fig. 5 - Relative Radiant Intensity vs. Angular Displacement Axis Title Axis Title 80 10000 1.2 10000 70 1.0 ) ux A 60 (m 1000 ant Fl 0.8 1000 50 adi urrent ne ne ine ne ine ne 40 e R 0.6 v 1st li 2nd li 2nd l 2nd l ati 1st li ard C 2nd li 30 el 100 R orw 0.4 100 - F - 20 el I F Φ e r 0.2 10 0 10 0 10 3 4 5 6 0 20 40 60 80 100 V - Forward Voltage (V) T - Ambient Temperature (°C) F amb 2nd line 2nd line Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Flux vs. Ambient Temperature Rev. 1.0, 31-Jan-2019
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