Datasheet BC846S (NXP) - 3
| 制造商 | NXP |
| 描述 | NPN general purpose double transistor 65 V, 100 mA, SOT363 |
| 页数 / 页 | 7 / 3 — THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. … |
| 文件格式/大小 | PDF / 206 Kb |
| 文件语言 | 英语 |
THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. Note. CHARACTERISTICS. MIN. TYP. MAX. Per transistor
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文件文字版本
link to page 3 link to page 3 NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor
ICBO collector cut-off current IE = 0; VCB = 30 V − − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 μA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 2 mA; VCE = 5 V 110 − − VCEsat collector-emitter saturation IC = 10 mA; IB = 0.5 mA − − 100 mV voltage IC = 100 mA; IB = 5 mA; note 1 − − 300 mV VBEsat base-emitter saturation IC = 10 mA; IB = 0.5 mA − 770 − mV voltage Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 1.5 pF fT transition frequency IC = 10 mA; VCE = 5 V; 100 − − MHz f = 100 MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 1999 Sep 01 3 Document Outline Features Applications Description Pinning Marking Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor
ICBO collector cut-off current IE = 0; VCB = 30 V − − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − − 5 μA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 2 mA; VCE = 5 V 110 − − VCEsat collector-emitter saturation IC = 10 mA; IB = 0.5 mA − − 100 mV voltage IC = 100 mA; IB = 5 mA; note 1 − − 300 mV VBEsat base-emitter saturation IC = 10 mA; IB = 0.5 mA − 770 − mV voltage Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 1.5 pF fT transition frequency IC = 10 mA; VCE = 5 V; 100 − − MHz f = 100 MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 1999 Sep 01 3 Document Outline Features Applications Description Pinning Marking Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers