Datasheet PN2907A, MMBT2907A, PZT2907A (ON Semiconductor) - 4

制造商ON Semiconductor
描述60 V PNP General-Purpose Transistor
页数 / 页11 / 4 — PN290. Typical Performance Characteristics. 7A / MMBT2907A / PZT2. ) V. ( …
修订版2
文件格式/大小PDF / 883 Kb
文件语言英语

PN290. Typical Performance Characteristics. 7A / MMBT2907A / PZT2. ) V. ( E. V = 5V. = 10. ENT. 125 °C. V R. URR. ITT. 25 °C. LSED C. C E. - 40 °C. YPI

PN290 Typical Performance Characteristics 7A / MMBT2907A / PZT2 ) V ( E V = 5V = 10 ENT 125 °C V R URR ITT 25 °C LSED C C E - 40 °C YPI

该数据表的模型线

文件文字版本

PN290 Typical Performance Characteristics 7A / MMBT2907A / PZT2 ) V IN ( E A
500
G
0.5
G A V = 5V
β
CE LT = 10 ENT
400
O
0.4
125 °C V R URR E
300
ITT
0.3
M 25 °C LSED C E
200
25 °C R
0.2
PU TO L C E CA
100
- 40 °C
0.1
LL 125 °C YPI O - 40 °C 907A — 60 T C -
0
-
0
FE
0.1 0.3 1 3 10 30 100 300
AT h S
1 10 100 500
I - CE C COLLECTOR CURRENT (mA) V I - COLLECTOR CURRE NT (mA) C Figure 1. Typical Pulsed Current Gain vs. Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Collector Current V PNP Gene ) ) V ( (V E
1
E
1
G G TA TA L - 40 °C L - 40 °C O
0.8
O
0.8
V V N R 25 °C O
0.6
ra E T
0.6
R 25 °C IT E l-Pu T M IT E 125
0.4
°C
0.4
M E 125 °C S
β
= 10 E rpose T A E S V = 5V CE A
0.2
- B
0.2
B ATS - N) BE
0
(O
0
V
1 10 100 500
BE
0.1 1 10 25
V r I I - COLLECTOR CURRE NT (mA) C - COLLECTOR CURRE NT (mA) ansistor C Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base-Emitter On Voltage vs. Collector Current Collector Current )
20
A
100
(n T V = 35V CB N )
16
E
10
F R p R ( U E
12
C NC R C
1
ib O TA T C CI
8
A LE P L
0.1
A O C
4
C ob C - I CBO
0.01 0 25 50 75 100 125 0.1 1 10 50
T - A AMBIE NT TEMP ERATURE ( C) ° REVERSE BIAS VOLTAGE (V) Figure 5. Collector Cut-Off Current vs. Figure 6. Input and Output Capacitance vs. Ambient Temperature Reverse Bias Voltage
www.onsemi.com 4