Datasheet IRF7832 (International Rectifier) - 7
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 7 — D.U.T. Fig 15. Fig 16 |
| 文件格式/大小 | PDF / 193 Kb |
| 文件语言 | 英语 |
D.U.T. Fig 15. Fig 16
该数据表的模型线
文件文字版本
IRF7832 Driver Gate Drive P.W.
D.U.T
Period D = P.W. Period + V * Circuit Layout Considerations GS=10V • Low Stray Inductance • Ground Plane - • Low Leakage Inductance Current Transformer D.U.T. ISD Waveform + Reverse Recovery Body Diode Forward Current Current - + - di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD • V dv/dt controlled by R DD Re-Applied RG G + Voltage • Driver same type as D.U.T. Body Diode Forward Drop • ISD controlled by Duty Factor "D" - Inductor Curent • D.U.T. - Device Under Test Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr
Fig 16.
Gate Charge Waveform www.irf.com 7
D.U.T
Period D = P.W. Period + V * Circuit Layout Considerations GS=10V • Low Stray Inductance • Ground Plane - • Low Leakage Inductance Current Transformer D.U.T. ISD Waveform + Reverse Recovery Body Diode Forward Current Current - + - di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD • V dv/dt controlled by R DD Re-Applied RG G + Voltage • Driver same type as D.U.T. Body Diode Forward Drop • ISD controlled by Duty Factor "D" - Inductor Curent • D.U.T. - Device Under Test Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr
Fig 16.
Gate Charge Waveform www.irf.com 7