Datasheet IRF7832 (International Rectifier) - 5
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 5 — Fig 9. Fig 10. Fig 11 |
| 文件格式/大小 | PDF / 193 Kb |
| 文件语言 | 英语 |
Fig 9. Fig 10. Fig 11
该数据表的模型线
文件文字版本
IRF7832 24 0.7 ) V 20 ( e 0.6 g at ) l A o I ( D = 250µA 16 V t n dl e o 0.5 rr h u s C 12 e r n h i T a r e 0.4 D t a , 8 G I D , )ht( 0.3 S 4 GV 0 0.2 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 T T J , Temperature (°C) C , Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Threshold Voltage Vs. Temperature Case Temperature 100 D = 0.50 ) A 10 J 0.20 ht 0.10 Z ( e 0.05 s n o 1 p 0.02 s e 0.01 R lamre 0.1 h T SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
Fig 9.
Maximum Drain Current Vs.
Fig 10.
Threshold Voltage Vs. Temperature Case Temperature 100 D = 0.50 ) A 10 J 0.20 ht 0.10 Z ( e 0.05 s n o 1 p 0.02 s e 0.01 R lamre 0.1 h T SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5