Datasheet IRF541 (Inchange Semiconductor)

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF541 ·FEATURES
·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed

·Rugged ·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 28 A IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
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