Datasheet HMC754S8GE (Analog Devices)

制造商Analog Devices
描述GaAs HBT High Linearity Push-Pull Amplifier, 75 Ohm, DC - 1 GHz
页数 / 页10 / 1 — HMC754S8GE. GaAs HBT HIGH LINEARITY. PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 …
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HMC754S8GE. GaAs HBT HIGH LINEARITY. PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz. Typical Applications. Features. Functional Diagram

Datasheet HMC754S8GE Analog Devices

文件文字版本

HMC754S8GE
v00.0409
GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER, 75 Ohm, DC - 1 GHz Typical Applications Features
8 The Hmc754s8Ge is ideal for: output ip2: +78 dBm • cATv / Broadband infrastructure High Gain: 14.5 dB • Test & measurement equipment High output ip3: +38 dBm T • line Amps and fiber nodes 75 ohm impedance m s • customer premise equipment single positive supply: +5v robust 1000v esD, class 1c k - soic-8 smT package c
Functional Diagram General Description
lo The Hmc754s8Ge is a GaAs/inGap HBT Dual channel Gain Block mmic smT amplifier covering Dc to 1 GHz. This versatile product contains two in B gain blocks, packaged in a single 8 lead plastic A soic-8, for use with both amplifiers combined in push-pull configuration using external baluns to cancel out second order non-linearities and improve ip2 performance. in this configuration, the Hmc754s8Ge r & G offers high gain, very low distortion & simple external e matching. This high linearity amplifier consumes only iv 160mA from a single positive supply. r s - D
Electrical Specifications, T = +25° C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1] A
r parameter min. Typ. max. Units ie 0.05 - 0.5 GHz 13.5 14.7 dB Gain 0.5 - 0.87 GHz 12.7 14.2 dB 0.87 - 1.0 GHz 12.1 13.4 dB lif p Gain variation over Temperature 0.05 - 0.87 GHz 0.008 dB/ °c 0.05 - 0.5 GHz 17 dB m input return loss 0.5 - 0.87 GHz 10 dB A 0.05 - 0.5 GHz 10 dB output return loss 0.5 - 0.87 GHz 20 dB reverse isolation 0.05 - 0.87 GHz 23 dB output power for 1 dB compression (p1dB) 0.05 - 0.87 GHz 19.5 21 dBm output Third order intercept point (ip3) 0.05 - 0.87 GHz 38 dBm (pout= 0 dBm per tone, 1 mHz spacing) output second order intercept point (ip2) 0.05 - 0.5 GHz 78 dBm composite second order (cso) [2] 0.05 - 0.87 GHz -81 dBc composite Triple Beat (cTB) [2] 0.05 - 0.87 GHz -75 dBc cross modulation (XmoD) [2] 0.05 - 0.87 GHz -67 dBc 0.05 - 0.5 GHz 5.5 dB noise figure 0.05 - 0.87 GHz 6.5 dB supply current (icc1 + icc2) 145 160 175 mA [1] Data taken with dual amplifiers combined in push-pull (default) configuration [2] input level +15 dBmv, 133 channels - with analog modulation Inf F or o m rat ip o r n ifc ur e n ,is hd e e d lbiv y e Anry alo a g n D d evi cto es ips la beclie ev eo d rtd o e b r e sa: ccH ur iattte itaen M d reliic a r bl o e w . H a o v weev eC r, o n r o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other poration, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No Or P d hoe n r e O : 7 n- 81-li 3 n 2 e 9- a 4 t 7 0 www 0 • O . rdh e itt r o it n e li . n co e a m
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license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 p p liocra t ia o pp n S s u @ p h por ittti : Pte. ho c n o e m : 1-800-ANALOG-D