Datasheet DGTD65T50S1PT (Diodes) - 2
| 制造商 | Diodes |
| 描述 | 650V Field Stop IGBT |
| 页数 / 页 | 9 / 2 — DGTD65T50S1PT. Absolute Maximum Ratings. Characteristic. Symbol. Value. … |
| 文件格式/大小 | PDF / 1.7 Mb |
| 文件语言 | 英语 |
DGTD65T50S1PT. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. www.diodes.com
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DGTD65T50S1PT Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCE 650 V TC = 25°C 100 A DC Collector Current, limited by Tvjmax IC TC = 100°C 50 A Pulsed Collector Current, tp limited by Tvjmax ICpuls 200 A Turn Off Safe Operating Area VCE ≤ 650V, Tvj = 175°C - 200 A TC = 25°C 60 A Diode Forward Current limited by Tvjmax IF TC = 100°C 30 A Diode Pulsed Current, tp limited by Tvjmax IFpuls 200 A Gate-Emitter Voltage VGE ±20 V Short Circuit Withstand Time VCC ≤ 400V, VGE = 15V, Tvj = 150°C tsc 5 µs Allowed Number of Short Circuits < 1000 Time Between Short Circuits ≥ 1.0s
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
375 Power Dissipation Linear Derating Factor (Note 6) TC = 25°C PD W TC = 100°C 188 Thermal Resistance, Junction to Ambient (Note 6) RθJA 40 Thermal Resistance, Junction to Case for IBGT (Note 6) RθJC 0.40 °C/W Thermal Resistance, Junction to Case for Diode (Note 6) RθJC 1.20 Operating Temperature Tvj -40 to +175 °C Storage Temperature Range TSTG -55 to +150 Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board. DGTD65T50S1PT 2 of 9 March 2018 Document Number DS39668 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCE 650 V TC = 25°C 100 A DC Collector Current, limited by Tvjmax IC TC = 100°C 50 A Pulsed Collector Current, tp limited by Tvjmax ICpuls 200 A Turn Off Safe Operating Area VCE ≤ 650V, Tvj = 175°C - 200 A TC = 25°C 60 A Diode Forward Current limited by Tvjmax IF TC = 100°C 30 A Diode Pulsed Current, tp limited by Tvjmax IFpuls 200 A Gate-Emitter Voltage VGE ±20 V Short Circuit Withstand Time VCC ≤ 400V, VGE = 15V, Tvj = 150°C tsc 5 µs Allowed Number of Short Circuits < 1000 Time Between Short Circuits ≥ 1.0s
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
375 Power Dissipation Linear Derating Factor (Note 6) TC = 25°C PD W TC = 100°C 188 Thermal Resistance, Junction to Ambient (Note 6) RθJA 40 Thermal Resistance, Junction to Case for IBGT (Note 6) RθJC 0.40 °C/W Thermal Resistance, Junction to Case for Diode (Note 6) RθJC 1.20 Operating Temperature Tvj -40 to +175 °C Storage Temperature Range TSTG -55 to +150 Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board. DGTD65T50S1PT 2 of 9 March 2018 Document Number DS39668 Rev. 1 - 2
www.diodes.com
© Diodes Incorporated