Datasheet BZT52 (Vishay) - 4
| 制造商 | Vishay |
| 描述 | Small Signal Zener Diodes |
| 页数 / 页 | 8 / 4 — BZT52-Series. TYPICAL CHARACTERISTICS |
| 修订版 | 1.9 |
| 文件格式/大小 | PDF / 144 Kb |
| 文件语言 | 英语 |
BZT52-Series. TYPICAL CHARACTERISTICS
该数据表的模型线
- BZT52B10 BZT52B11 BZT52B12 BZT52B13 BZT52B15 BZT52B16 BZT52B18 BZT52B20 BZT52B22 BZT52B24 BZT52B27 BZT52B2V4 BZT52B2V7 BZT52B30 BZT52B33 BZT52B36 BZT52B39 BZT52B3V0 BZT52B3V3 BZT52B3V6 BZT52B3V9 BZT52B43 BZT52B47 BZT52B4V3 BZT52B4V7 BZT52B51 BZT52B56 BZT52B5V1 BZT52B5V6 BZT52B62 BZT52B68 BZT52B6V2 BZT52B6V8 BZT52B75 BZT52B7V5 BZT52B8V2 BZT52B9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16 BZT52C18 BZT52C20 BZT52C22 BZT52C24 BZT52C27 BZT52C2V4 BZT52C2V7 BZT52C30 BZT52C33 BZT52C36 BZT52C39 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C43 BZT52C47 BZT52C4V3 BZT52C4V7 BZT52C51 BZT52C56 BZT52C5V1 BZT52C5V6 BZT52C62 BZT52C68 BZT52C6V2 BZT52C6V8 BZT52C75 BZT52C7V5 BZT52C8V2 BZT52C9V1
文件文字版本
BZT52-Series
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) mA Ω 103 100 T = 25 °C J 102 5 4 I 10 F 3 r 33 T = 100 °C zj J 2 1 27 22 10-1 10 18 T = 25 °C J 10-2 15 5 4 12 10-3 3 10 2 10-4 6.8/8.2 6.2 10-5 1 0 0.2 0.4 0.6 0.8 1V 0.1 2 5 1 2 5 10 2 5 100 mA 18114 V 18119 I F Z Fig. 1 - Forward characteristics Fig. 4 - Dynamic Resistance vs. Zener Current mW Ω 500 103 T = 25 °C 7 j 5 400 4 R 3 47 + 51 P zj 43 tot 2 39 300 36 102 200 7 5 4 3 100 2 0 10 0 100 200 °C 0.1 2 3 4 5 1 2 3 4 5 10 18120 mA 18888 T I amb Z Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 5 - Dynamic Resistance vs. Zener Current Ω Ω 103 1000 ΔV T = 25 °C Z J 5 R = R x V x 5 4 zth thA Z ΔT 4 3 j 3 2 2 r Rzth zj 100 102 5 5 4 4 3 3 2 2 10 2.7 10 3.6 5 5 4 4.7 4 3 5.1 3 negative positive 2 2 5.6 1 1 0.1 2 5 1 2 5 10 2 5 100 mA 1 2 3 4 5 10 2 3 4 5 100 V 18117 IZ 18121 V at I = 5 mA Z Z Fig. 3 - Dynamic Resistance vs. Zener Current Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.9, 20-Feb-18
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Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) mA Ω 103 100 T = 25 °C J 102 5 4 I 10 F 3 r 33 T = 100 °C zj J 2 1 27 22 10-1 10 18 T = 25 °C J 10-2 15 5 4 12 10-3 3 10 2 10-4 6.8/8.2 6.2 10-5 1 0 0.2 0.4 0.6 0.8 1V 0.1 2 5 1 2 5 10 2 5 100 mA 18114 V 18119 I F Z Fig. 1 - Forward characteristics Fig. 4 - Dynamic Resistance vs. Zener Current mW Ω 500 103 T = 25 °C 7 j 5 400 4 R 3 47 + 51 P zj 43 tot 2 39 300 36 102 200 7 5 4 3 100 2 0 10 0 100 200 °C 0.1 2 3 4 5 1 2 3 4 5 10 18120 mA 18888 T I amb Z Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 5 - Dynamic Resistance vs. Zener Current Ω Ω 103 1000 ΔV T = 25 °C Z J 5 R = R x V x 5 4 zth thA Z ΔT 4 3 j 3 2 2 r Rzth zj 100 102 5 5 4 4 3 3 2 2 10 2.7 10 3.6 5 5 4 4.7 4 3 5.1 3 negative positive 2 2 5.6 1 1 0.1 2 5 1 2 5 10 2 5 100 mA 1 2 3 4 5 10 2 3 4 5 100 V 18117 IZ 18121 V at I = 5 mA Z Z Fig. 3 - Dynamic Resistance vs. Zener Current Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev. 1.9, 20-Feb-18
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Document Number: 85760 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000