Datasheet IRF4905SPbF, IRF4905LPbF (Infineon) - 2
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET Features |
| 页数 / 页 | 12 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| 文件格式/大小 | PDF / 370 Kb |
| 文件语言 | 英语 |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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文件文字版本
IRF4905S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 20 mΩ VGS = -10V, ID = -42A e VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 19 ––– ––– S VDS = -25V, ID = -42A IDSS Drain-to-Source Leakage Current ––– ––– -25 µA VDS = -55V, VGS = 0V ––– ––– -200 VDS = -44V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 20V Qg Total Gate Charge ––– 120 180 ID = -42A Qgs Gate-to-Source Charge ––– 32 ––– nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– 53 ––– VGS = -10V e td(on) Turn-On Delay Time ––– 20 ––– VDD = -28V tr Rise Time ––– 99 ––– ID = -42A td(off) Turn-Off Delay Time ––– 51 ––– ns RG = 2.6 Ω tf Fall Time ––– 64 ––– VGS = -10V e LS Internal Source Inductance ––– 7.5 ––– nH Between lead, and center of die contact Ciss Input Capacitance ––– 3500 ––– VGS = 0V Coss Output Capacitance ––– 1250 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 450 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 4620 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 940 ––– VGS = 0V, VDS = -44V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 1530 ––– VGS = 0V, VDS = 0V to -44V f
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -42 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– -280 integral reverse (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -42A, VGS = 0V e trr Reverse Recovery Time ––– 61 92 ns TJ = 25°C, IF = -42A, VDD = -28V Qrr Reverse Recovery Charge ––– 150 220 nC di/dt = -100A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 20 mΩ VGS = -10V, ID = -42A e VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 19 ––– ––– S VDS = -25V, ID = -42A IDSS Drain-to-Source Leakage Current ––– ––– -25 µA VDS = -55V, VGS = 0V ––– ––– -200 VDS = -44V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 20V Qg Total Gate Charge ––– 120 180 ID = -42A Qgs Gate-to-Source Charge ––– 32 ––– nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– 53 ––– VGS = -10V e td(on) Turn-On Delay Time ––– 20 ––– VDD = -28V tr Rise Time ––– 99 ––– ID = -42A td(off) Turn-Off Delay Time ––– 51 ––– ns RG = 2.6 Ω tf Fall Time ––– 64 ––– VGS = -10V e LS Internal Source Inductance ––– 7.5 ––– nH Between lead, and center of die contact Ciss Input Capacitance ––– 3500 ––– VGS = 0V Coss Output Capacitance ––– 1250 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 450 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 4620 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 940 ––– VGS = 0V, VDS = -44V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 1530 ––– VGS = 0V, VDS = 0V to -44V f
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -42 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– -280 integral reverse (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -42A, VGS = 0V e trr Reverse Recovery Time ––– 61 92 ns TJ = 25°C, IF = -42A, VDD = -28V Qrr Reverse Recovery Charge ––– 150 220 nC di/dt = -100A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com