Datasheet LT3710 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Secondary Side Synchronous Post Regulator |
| 页数 / 页 | 12 / 3 — ELECTRICAL CHARACTERISTICS The. denotes the specifications which apply … |
| 文件格式/大小 | PDF / 228 Kb |
| 文件语言 | 英语 |
ELECTRICAL CHARACTERISTICS The. denotes the specifications which apply over the full operating
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LT3710
ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VCC = 11V, operating maximum VCC = 24V, no load on any outputs unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS Oscillator
Switching Frequency CS = 500pF (No SYNC) ● 170 200 240 kHz CS = 333pF (No SYNC) ● 240 280 340 kHz Synchronization Frequency Range CS = 500pF ● 245 400 kHz CS = 333pF ● 345 500 kHz CSET Ramp Valley Voltage CS = 1000pF (No SYNC) 0.90 1.15 1.4 V CSET Peak-to-Peak Voltage CS = 1000pF (No SYNC) 2.4 V Synchronization Pulse Threshold on SYNC Pin Falling Edge VSYNC 2.5 V Maximum Duty Cycle VFB = VREF – 5mV, CS > 500pF ● 85 90 %
Gate Drivers (TGATE, BGATE)
VGBIAS IGBIAS < 25mA ● 7.5 8.0 8.5 V VTGATE High (VTGATE – VSW) ITGATE < 50mA, VBOOST = VGBIAS – 0.5V ● 5 6 7 V VBGATE High IBGATE < 50mA ● 5 6 7.5 V VTGATE Low (VTGATE – VSW) ITGATE < – 50mA ● 0.5 V VBGATE Low IBGATE < – 50mA ● 0.5 V Peak Gate Drive Current 10nF Load 1 A Gate Drive Rise and Fall Time 1nF Load 25 ns
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 3:
This IC includes overtemperature protection that is intended to of a device may be impaired. protect the device during momentary overload conditions. Junction
Note 2:
The LT3710E is guaranteed to meet performance specifications temperature will exceed 125°C when overtemperature protection is active. from 0°C to 125°C. Specifications over the – 40°C to 125°C operating Continuous operation above the specified maximum operating junction temperature range are assured by design, characterization and correlation temperature may impair device reliability. with statistical process controls.
W U TYPICAL PERFOR A CE CHARACTERISTICS VGBIAS vs IGBIAS over Junction Voltage Amplifier VA Gain and Temperature ICC vs VCC (Switching Off) Phase
8.1 13 120 –0 –40°C TA = 25°C TA = 25°C 12 GAIN 8.0 25°C 11 80 –50 (–111°) PHASE (DEG) 10 (V) PHASE 7.9 (mA) 9 GBIAS 40 –100 V I CC GAIN (dB) 8 7.8 7 0 –150 125°C 6 0dB, 10MHz 7.7 5 –20 –180 0 10 20 26 8 10 12 14 16 18 20 22 24 10 100 1k 10k 100k 1M 10M 100M IGBIAS (mA) VCC (V) FREQUENCY (Hz) 3710 G01 3710 G02 3710 G03 3710f 3
ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VCC = 11V, operating maximum VCC = 24V, no load on any outputs unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS Oscillator
Switching Frequency CS = 500pF (No SYNC) ● 170 200 240 kHz CS = 333pF (No SYNC) ● 240 280 340 kHz Synchronization Frequency Range CS = 500pF ● 245 400 kHz CS = 333pF ● 345 500 kHz CSET Ramp Valley Voltage CS = 1000pF (No SYNC) 0.90 1.15 1.4 V CSET Peak-to-Peak Voltage CS = 1000pF (No SYNC) 2.4 V Synchronization Pulse Threshold on SYNC Pin Falling Edge VSYNC 2.5 V Maximum Duty Cycle VFB = VREF – 5mV, CS > 500pF ● 85 90 %
Gate Drivers (TGATE, BGATE)
VGBIAS IGBIAS < 25mA ● 7.5 8.0 8.5 V VTGATE High (VTGATE – VSW) ITGATE < 50mA, VBOOST = VGBIAS – 0.5V ● 5 6 7 V VBGATE High IBGATE < 50mA ● 5 6 7.5 V VTGATE Low (VTGATE – VSW) ITGATE < – 50mA ● 0.5 V VBGATE Low IBGATE < – 50mA ● 0.5 V Peak Gate Drive Current 10nF Load 1 A Gate Drive Rise and Fall Time 1nF Load 25 ns
Note 1:
Absolute Maximum Ratings are those values beyond which the life
Note 3:
This IC includes overtemperature protection that is intended to of a device may be impaired. protect the device during momentary overload conditions. Junction
Note 2:
The LT3710E is guaranteed to meet performance specifications temperature will exceed 125°C when overtemperature protection is active. from 0°C to 125°C. Specifications over the – 40°C to 125°C operating Continuous operation above the specified maximum operating junction temperature range are assured by design, characterization and correlation temperature may impair device reliability. with statistical process controls.
W U TYPICAL PERFOR A CE CHARACTERISTICS VGBIAS vs IGBIAS over Junction Voltage Amplifier VA Gain and Temperature ICC vs VCC (Switching Off) Phase
8.1 13 120 –0 –40°C TA = 25°C TA = 25°C 12 GAIN 8.0 25°C 11 80 –50 (–111°) PHASE (DEG) 10 (V) PHASE 7.9 (mA) 9 GBIAS 40 –100 V I CC GAIN (dB) 8 7.8 7 0 –150 125°C 6 0dB, 10MHz 7.7 5 –20 –180 0 10 20 26 8 10 12 14 16 18 20 22 24 10 100 1k 10k 100k 1M 10M 100M IGBIAS (mA) VCC (V) FREQUENCY (Hz) 3710 G01 3710 G02 3710 G03 3710f 3