Datasheet BFR92A (NXP) - 3
| 制造商 | NXP |
| 描述 | NPN 5 GHz wideband transistor |
| 页数 / 页 | 12 / 3 — THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. … |
| 修订版 | 4.0 |
| 文件格式/大小 | PDF / 284 Kb |
| 文件语言 | 英语 |
THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. Note. CHARACTERISTICS. MIN. TYP. MAX. Notes
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文件文字版本
NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1 260 K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector leakage current IE = 0; VCB = 10 V − − 50 nA hFE DC current gain IC = 15 mA; VCE = 10 V; see Fig.4 65 90 135 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz; − 0.6 − pF see Fig.5 Ce emitter capacitance IC = ic = 0; VEB = 10 V; f = 1 MHz − 1.2 − pF Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz; − 5 − GHz see Fig.6 GUM maximum unilateral power IC = 15 mA; VCE = 10 V; f = 1 GHz; − 14 − dB gain (note 1) Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; − 8 − dB Tamb = 25 °C F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; − 2.1 − dB Γs = Γopt; Tamb = 25 °C; see Figs 13 and 14 IC = 5 mA; VCE = 10 V; f = 2 GHz; − 3 − dB Γs = Γopt; Tamb = 25 °C; see Figs 13 and 14 VO output voltage notes 2 and 3 − 150 − mV d2 second order intermodulation notes 2 and 4; see Fig.16 − −50 − dB distortion
Notes
2 S 1. G 21 UM is the maximum unilateral power gain, assuming S12 is zero and G 10 log ------------------------------- dB˙ = . UM 2 2 1 – S 1 – S 11 22 2. Measured on the same die in a SOT37 package (BFR90A). 3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C Vp = VO at dim = −60 dB; fp = 795.25 MHz; Vq = VO −6 dB; fq = 803.25 MHz; Vr = VO −6 dB; fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz. 4. IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C Vp = 60 mV at fp = 250 MHz; Vq = 60 mV at fq = 560 MHz; measured at fp + fq = 810 MHz. Rev. 04 - 2 March 2009 3 of 12 Document Outline FEATURES DESCRIPTION APPLICATIONS PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1 260 K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector leakage current IE = 0; VCB = 10 V − − 50 nA hFE DC current gain IC = 15 mA; VCE = 10 V; see Fig.4 65 90 135 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz; − 0.6 − pF see Fig.5 Ce emitter capacitance IC = ic = 0; VEB = 10 V; f = 1 MHz − 1.2 − pF Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 15 mA; VCE = 10 V; f = 500 MHz; − 5 − GHz see Fig.6 GUM maximum unilateral power IC = 15 mA; VCE = 10 V; f = 1 GHz; − 14 − dB gain (note 1) Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; − 8 − dB Tamb = 25 °C F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; − 2.1 − dB Γs = Γopt; Tamb = 25 °C; see Figs 13 and 14 IC = 5 mA; VCE = 10 V; f = 2 GHz; − 3 − dB Γs = Γopt; Tamb = 25 °C; see Figs 13 and 14 VO output voltage notes 2 and 3 − 150 − mV d2 second order intermodulation notes 2 and 4; see Fig.16 − −50 − dB distortion
Notes
2 S 1. G 21 UM is the maximum unilateral power gain, assuming S12 is zero and G 10 log ------------------------------- dB˙ = . UM 2 2 1 – S 1 – S 11 22 2. Measured on the same die in a SOT37 package (BFR90A). 3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C Vp = VO at dim = −60 dB; fp = 795.25 MHz; Vq = VO −6 dB; fq = 803.25 MHz; Vr = VO −6 dB; fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz. 4. IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C Vp = 60 mV at fp = 250 MHz; Vq = 60 mV at fq = 560 MHz; measured at fp + fq = 810 MHz. Rev. 04 - 2 March 2009 3 of 12 Document Outline FEATURES DESCRIPTION APPLICATIONS PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history