Datasheet TC4421A, TC4422A (Microchip) - 4

制造商Microchip
描述9A High-Speed MOSFET Drivers
页数 / 页22 / 4 — TC4421A/TC4422A. DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE). …
修订版02-05-2013
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TC4421A/TC4422A. DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE). Electrical Specifications:. Parameters. Sym. Min. Typ. Max

TC4421A/TC4422A DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Parameters Sym Min Typ Max

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TC4421A/TC4422A DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications:
Unless otherwise noted, over operating temperature range with 4.5V  VDD  18V.
Parameters Sym Min Typ Max Units Conditions Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current I  IN –10 — +10 µA 0VVIN VDD
Output
High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance, High ROH — — 2.0 IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL — — 1.6 IOUT = 10 mA, VDD = 18V
Switching Time (Note 1)
Rise Time tR — 38 45 ns
Figure 4-1
, CL = 10,000 pF Fall Time tF — 33 40 ns
Figure 4-1
, CL = 10,000 pF Propagation Delay Time tD1 — 50.4 60 ns
Figure 4-1
, CL = 10,000 pF Propagation Delay Time tD2 — 53 60 ns
Figure 4-1
, CL = 10,000 pF
Power Supply
Power Supply Current IS — 200 500 µA VIN = 3V — 50 150 µA VIN = 0V Operating Input Voltage VDD 4.5 — 18 V
Note 1:
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V  VDD  18V.
Parameters Sym Min Typ Max Units Conditions Temperature Ranges
Specified Temperature Range (V) TA –40 — +125 °C Maximum Junction Temperature TJ — — +150 °C Storage Temperature Range TA –65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220 JA — 71 — °C/W Without heat sink Thermal Resistance, 8L-6x5 DFN JA — 33.2 — °C/W Typical 4-layer board with vias to ground plane Thermal Resistance, 8L-PDIP JA — 125 — °C/W Thermal Resistance, 8L-SOIC JA — 155 — °C/W DS21946B-page 4  2005-2013 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Rise Time vs. Supply Voltage. FIGURE 2-2: Rise Time vs. Capacitive Load. FIGURE 2-3: Fall Time vs. Supply Voltage. FIGURE 2-4: Fall Time vs. Capacitive Load. FIGURE 2-5: Rise and Fall Times vs. Temperature. FIGURE 2-6: Crossover Energy vs Supply Voltage. FIGURE 2-7: Propagation Delay vs. Supply Voltage. FIGURE 2-8: Propagation Delay vs. Input Amplitude. FIGURE 2-9: Propagation Delay vs. Temperature. FIGURE 2-10: Quiescent Supply Current vs. Supply Voltage. FIGURE 2-11: Quiescent Supply Current vs. Temperature. FIGURE 2-12: Input Threshold vs. Temperature. FIGURE 2-13: Input Threshold vs. Supply Voltage. FIGURE 2-14: High-State Output Resistance vs. Supply Voltage. FIGURE 2-15: Low-State Output Resistance vs. Supply Voltage. FIGURE 2-16: Supply Current vs. Capactive Load (VDD = 18V). FIGURE 2-17: Supply Current vs. Capactive Load (VDD = 12V). FIGURE 2-18: Supply Current vs. Capactive Load (VDD = 6V). FIGURE 2-19: Supply Current vs. Frequency (VDD = 18V). FIGURE 2-20: Supply Current vs. Frequency (VDD = 12V). FIGURE 2-21: Supply Current vs. Frequency (VDD = 6V). 3.0 Pin Descriptions TABLE 3-1: Pin Function Table 3.1 Supply Input (VDD) 3.2 Control Input 3.3 CMOS Push-Pull Output 3.4 Ground 3.5 Exposed Metal Pad 3.6 Metal Tab 4.0 Applications Information FIGURE 4-1: Switching Time Test Circuits. 5.0 Packaging Information 5.1 Package Marking Information Corporate Office Atlanta Boston Chicago Cleveland Fax: 216-447-0643 Dallas Detroit Indianapolis Toronto Fax: 852-2401-3431 Australia - Sydney China - Beijing China - Shanghai India - Bangalore Korea - Daegu Korea - Seoul Singapore Taiwan - Taipei Fax: 43-7242-2244-393 Denmark - Copenhagen France - Paris Germany - Munich Italy - Milan Spain - Madrid UK - Wokingham Worldwide Sales and Service