Datasheet 2N4403 (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | General Purpose PNP Silicon Transistors |
| 页数 / 页 | 7 / 1 — Preferred Device. PNP Silicon. Features. http://onsemi.com. MAXIMUM … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 121 Kb |
| 文件语言 | 英语 |
Preferred Device. PNP Silicon. Features. http://onsemi.com. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. TO−92. CASE 29. STYLE 1
文件文字版本
link to page 2 2N4403
Preferred Device
General Purpose Transistors
PNP Silicon Features http://onsemi.com
• Pb−Free Packages are Available* COLLECTOR 3 2
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 40 Vdc 1 Collector − Base Voltage V EMITTER CBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C
TO−92 CASE 29
Total Device Dissipation @ TC = 25°C PD 1.5 W
STYLE 1
Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C 1 1 Temperature Range 2 2 3 3
THERMAL CHARACTERISTICS
STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL
Characteristic Symbol Max Unit
AMMO PACK Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2N 4403 AYWW G G 2N4403 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 3 2N4403/D
Preferred Device
General Purpose Transistors
PNP Silicon Features http://onsemi.com
• Pb−Free Packages are Available* COLLECTOR 3 2
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 40 Vdc 1 Collector − Base Voltage V EMITTER CBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C
TO−92 CASE 29
Total Device Dissipation @ TC = 25°C PD 1.5 W
STYLE 1
Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C 1 1 Temperature Range 2 2 3 3
THERMAL CHARACTERISTICS
STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL
Characteristic Symbol Max Unit
AMMO PACK Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2N 4403 AYWW G G 2N4403 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 3 2N4403/D