Datasheet STTH102 (STMicroelectronics) - 3

STTH102 Characteristics Figure 3. Average forward current versus Figure 4. Average forward current versus ambient temperature (
δ
= 0.5) (SMA) ambient temperature (
δ
= 0.5) (DO-41) IF(AV)(A) IF(AV)(A)
1.2 1.2 Rth(j-a)=Rth(j-I) Rth(j-a)=Rth(j-I) 1.0 1.0 0.8 0.8 0.6 Rth(j-a)=120°C/W 0.6 Rth(j-a)=110°C/W 0.4 0.4 T T 0.2 0.2 δ
Tamb(°C) Tamb(°C)
=tp/T tp δ=tp/T tp 0.0 0.0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Figure 5. Relative variation of thermal Figure 6. Relative variation of thermal impedance junction to ambient impedance junction to ambient versus pulse duration (epoxy versus pulse duration (DO-41) printed circuit board, e(Cu) = 35 µm, recommended pad layout) (SMA) Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c)
1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 δ = 0.5 0.6 δ = 0.5 0.5 0.5 0.4 0.4 0.3 δ = 0.2 0.3 T δ = 0.2 T δ = 0.1 0.2 0.2 δ = 0.1 0.1
t
0.1
p(s)
δ=tp/T tp
p
δ=tp/T tp
t (s)
Single pulse Single pulse 0.0 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Figure 7. Forward voltage drop versus Figure 8. Junction capacitance versus forward current reverse voltage applied (typical values) IFM(A) C(pF)
100.0 100 F=1MHz V =30mV OSC RMS Tj=125°C T =25°C j (maximum values) 10.0 Tj=125°C (typical values) T =25°C 10 j (maximum values) 1.0
V VR(V) FM(V)
0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1 10 100 1000 3/7 Document Outline STTH102 High efficiency ultrafast diode Table 1. Absolute ratings (limiting values) 1 Characteristics Table 2. Thermal resistance Table 3. Static Electrical Characteristics Table 4. Dynamic electrical characteristics Figure 1. Average forward power dissipation versus average forward current (SMA) Figure 2. Average forward power dissipation versus average forward current (DO-41) Figure 3. Average forward current versus ambient temperature (d = 0.5) (SMA) Figure 4. Average forward current versus ambient temperature (d = 0.5) (DO-41) Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu) = 35 µm, recommended pad layout) (SMA) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Figure 7. Forward voltage drop versus forward current Figure 8. Junction capacitance versus reverse voltage applied (typical values) Figure 9. Reverse recovery time versus dIF/dt (90% confidence) Figure 10. Peak recovery current versus dIF/dt (90% confidence) Figure 11. Reverse recovery charges versus dIF/dt (90% confidence) Figure 12. Relative variations of dynamic parameters versus junction temperature Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Figure 14. Thermal resistance versus lead length (DO-41) 2 Package information Table 5. SMA Dimensions Figure 15. Footprint (dimensions in mm) Table 6. DO-41 (Plastic) Package dimensions 3 Ordering information 4 Revision history