Datasheet BC807-25LT1G - ON Semiconductor TRANSISTOR, BC807-25LT1 — 数据表

详细说明

Manufacturer: ON Semiconductor

Description: TRANSISTOR, BC807-25LT1

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Docket:
BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors
PNP Silicon
Features
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COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value -45 -50 -5.0 -500 Unit V V V mAdc 1 2 SOT-23 CASE 318 STYLE 6 3

Specifications:

• Collector Emitter Voltage V(br)ceo: -45 V
• Collector Emitter Voltage Vces: 160 V
• DC Collector Current: 500 mA
• DC Current Gain Min: 400
• DC Current Gain: 100
• Gain Bandwidth ft Typ: 100 MHz
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 300 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 100 MHz

RoHS: Yes

其他名称:

BC80725LT1G, BC807 25LT1G