Datasheet MMBTH10LT1G - ON Semiconductor TRANSISTOR, NPN — 数据表
Part Number: MMBTH10LT1G
详细说明
Manufacturer: ON Semiconductor
Description: TRANSISTOR, NPN
Docket:
MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc 2 EMITTER
· These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Specifications:
- Collector Emitter Voltage V(br)ceo: 25 V
- Collector Emitter Voltage Vces: 500 mV
- Current Ic Continuous a Max: 4 A
- DC Collector Current: 4 mA
- DC Current Gain Min: 60
- DC Current Gain: 60
- Gain Bandwidth ft Typ: 650 MHz
- Mounting Type: SMD
- Number of Pins: 3
- Package / Case: SOT-23
- Power Dissipation Max: 300 mW
- Power Dissipation: 225 mW
- SVHC: No SVHC (19-Dec-2011)
- Transistor Case Style: SOT-23
- Transistor Polarity: NPN
RoHS: Yes