Datasheet MMBT5550LT1G - ON Semiconductor BIPOLAR TRANSISTOR — 数据表
Part Number: MMBT5550LT1G
详细说明
Manufacturer: ON Semiconductor
Description: BIPOLAR TRANSISTOR
Docket:
MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE 2 EMITTER
· These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Specifications:
- Collector Emitter Voltage V(br)ceo: 140 V
- Collector Emitter Voltage Vces: 60 V
- Current Ic Continuous a Max: 60 mA
- DC Collector Current: 600 mA
- DC Current Gain Min: 250
- DC Current Gain: 250
- Mounting Type: SMD
- Number of Pins: 3
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-23
- Power Dissipation: 225 mW
- SVHC: No SVHC (19-Dec-2011)
- Transistor Case Style: SOT-23
- Transistor Polarity: NPN
- Transistor Type: Power Bipolar
RoHS: Yes