Datasheet PBSS303PD - NXP TRANSISTOR, PNP, 60 V, 3 A, SSOT-6 — 数据表

NXP PBSS303PD

Part Number: PBSS303PD

详细说明

Manufacturer: NXP

Description: TRANSISTOR, PNP, 60 V, 3 A, SSOT-6

data sheetDownload Data Sheet

Docket:
PBSS303PD
60 V, 3 A PNP low VCEsat (BISS) transistor
Rev.

02 -- 20 November 2009 Product data sheet
1. Product profile
1.1 General description

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: -60 V
  • Collector Emitter Voltage Vces: -675 mV
  • Current Ic @ Vce Sat: -6 A
  • Current Ic Continuous a Max: -3 A
  • DC Current Gain Min: 180
  • DC Current Gain: -500 mA
  • Gain Bandwidth ft Typ: 110 MHz
  • Mounting Type: SMD
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SSOT-6
  • Power Dissipation Pd: 1.1 W
  • Power Dissipation Ptot Max: 1.1 W
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SSOT
  • Transistor Polarity: PNP
  • Transistor Type: General Purpose

RoHS: Yes