Datasheet PDTB123ET - NXP — 数据表

NXP PDTB123ET

Part Number: PDTB123ET

详细说明

Manufacturer: NXP

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Specifications:

  • Collector Emitter Voltage V(br)ceo: 50 V
  • Collector Emitter Voltage Vces: 300 mV
  • Continuous Collector Current Ic Max: 500 mA
  • Current Ic Continuous a Max: 50 mA
  • DC Collector Current: 50 mA
  • DC Current Gain Min: 40
  • DC Current Gain: 40
  • Mounting Type: SMD
  • Number of Pins: 3
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation: 250 mW
  • Resistance R1: 2.2 kOhm
  • Resistance R2: 2.2 kOhm
  • SVHC: No SVHC (19-Dec-2011)
  • Transistor Case Style: SOT-23
  • Transistor Polarity: PNP

RoHS: Yes